DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, HJ | ko |
dc.contributor.author | Cho, Gyuseong | ko |
dc.contributor.author | Choi, J | ko |
dc.contributor.author | Jung, KW | ko |
dc.date.accessioned | 2009-07-27T05:03:44Z | - |
dc.date.available | 2009-07-27T05:03:44Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-06 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.80, no.25, pp.4843 - 4845 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/10301 | - |
dc.description.abstract | In this letter, we report the leakage current of amorphous silicon (a-Si:H) p-i-n photodiodes, of which the p layer is formed by ion shower doping. The ion shower doping technique has an advantage over plasma-enhanced chemical vapor deposition (PECVD) in the fabrication of a large-area amorphous silicon flat-panel detector. The leakage current of the ion shower diodes shows a better uniformity within a 30 cmx40 cm substrate than that of the PECVD diodes. However, it shows a higher leakage current of 2-3 pA/mm(2) at -5 V. This high current originates from the high injection current at the p-i junction. (C) 2002 American Institute of Physics. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Leakage current of amorphous silicon p-i-n diodes made by ion shower doping | - |
dc.type | Article | - |
dc.identifier.wosid | 000176275400053 | - |
dc.identifier.scopusid | 2-s2.0-79956007414 | - |
dc.type.rims | ART | - |
dc.citation.volume | 80 | - |
dc.citation.issue | 25 | - |
dc.citation.beginningpage | 4843 | - |
dc.citation.endingpage | 4845 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Cho, Gyuseong | - |
dc.contributor.nonIdAuthor | Kim, HJ | - |
dc.contributor.nonIdAuthor | Choi, J | - |
dc.contributor.nonIdAuthor | Jung, KW | - |
dc.type.journalArticle | Article | - |
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