DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Hee-Gon | ko |
dc.contributor.author | Cho, Jong-Hyun | ko |
dc.contributor.author | Kim, Myung-Hoi | ko |
dc.contributor.author | Kim, Ki-Yeong | ko |
dc.contributor.author | Lee, Jun-Ho | ko |
dc.contributor.author | Lee, Hyung-Dong | ko |
dc.contributor.author | Park, Kun-Woo | ko |
dc.contributor.author | Choi, Kwang-Seong | ko |
dc.contributor.author | Bae, Hyun-Cheol | ko |
dc.contributor.author | Kim, Joung-Ho | ko |
dc.contributor.author | Kim, Ji-Seong | ko |
dc.date.accessioned | 2013-03-12T17:24:00Z | - |
dc.date.available | 2013-03-12T17:24:00Z | - |
dc.date.created | 2012-11-29 | - |
dc.date.created | 2012-11-29 | - |
dc.date.issued | 2012-10 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, v.2, no.10, pp.1672 - 1685 | - |
dc.identifier.issn | 2156-3950 | - |
dc.identifier.uri | http://hdl.handle.net/10203/102996 | - |
dc.description.abstract | Using high-speed through-silicon via (TSV) channels is a potential means of utilizing 3-D interconnections to realize considerable high-bandwidth throughput in vertically stacked and laterally distributed integrated circuits. However, although the TSV and a silicon interposer in a high-speed TSV channel lead to a significant decrease of the interconnect length, the received digital signal after transmission through a TSV channel is still degraded at a high data-rate due to the nonidealities of the channel. Therefore, an analysis of the signal integrity in a high-speed TSV channel is necessary. In this paper, a single-ended high-speed TSV channel is measured and analyzed in the frequency-domain and the time-domain. To measure the high-speed TSV channel, two types of test vehicles are fabricated, consisting of TSVs and interposers. With these test vehicles, the channel losses are measured in the frequency-domain up to 20 GHz, and eye-diagrams are measured in the time-domain at 1 Gb/s and 10 Gb/s. Based on these measurements, the channel loss, characteristic impedance, and reflection of the high-speed TSV channel are analyzed and compared to those of the channel in multichip module (MCM) package. Because of the losses from the silicon-substrate and the thin oxide-layer used in the TSVs, the overall loss of the high-speed TSV channel is higher than that of the MCM channel. In addition, the characteristic impedance of the high-speed TSV channel is frequency-dependent, whereas that of the MCM channel is frequency-independent. Moreover, in contrast to the MCM channel, the reflection is negligible in the high-speed TSV channel because the channel is too short and the losses are too high to be affected by the reflection. Finally, the design guidance of a high-speed TSV channel for wide bandwidth is determined based on the analysis of the measurements. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | SILICON | - |
dc.subject | TRANSMISSION | - |
dc.subject | DESIGN | - |
dc.title | Measurement and Analysis of a High-Speed TSV Channel | - |
dc.type | Article | - |
dc.identifier.wosid | 000309729400014 | - |
dc.identifier.scopusid | 2-s2.0-84867220801 | - |
dc.type.rims | ART | - |
dc.citation.volume | 2 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | 1672 | - |
dc.citation.endingpage | 1685 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | - |
dc.identifier.doi | 10.1109/TCPMT.2012.2207900 | - |
dc.contributor.localauthor | Kim, Joung-Ho | - |
dc.contributor.nonIdAuthor | Lee, Jun-Ho | - |
dc.contributor.nonIdAuthor | Lee, Hyung-Dong | - |
dc.contributor.nonIdAuthor | Park, Kun-Woo | - |
dc.contributor.nonIdAuthor | Choi, Kwang-Seong | - |
dc.contributor.nonIdAuthor | Bae, Hyun-Cheol | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Channel loss | - |
dc.subject.keywordAuthor | high-speed through-silicon via (TSV) channel | - |
dc.subject.keywordAuthor | measurement | - |
dc.subject.keywordAuthor | reflection | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | TRANSMISSION | - |
dc.subject.keywordPlus | DESIGN | - |
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