DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Sung-Jin | ko |
dc.contributor.author | Moon, Dong-Il | ko |
dc.contributor.author | Duarte, Juan P. | ko |
dc.contributor.author | Ahn, Jae-Hyuk | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-03-12T17:07:29Z | - |
dc.date.available | 2013-03-12T17:07:29Z | - |
dc.date.created | 2012-10-09 | - |
dc.date.created | 2012-10-09 | - |
dc.date.issued | 2012-03 | - |
dc.identifier.citation | ACS NANO, v.6, no.3, pp.2378 - 2384 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | http://hdl.handle.net/10203/102956 | - |
dc.description.abstract | A thermo-morphic transition of a silicon nanowire (Si-NW) is investigated in vacuum and air ambients, and notable differences are found under each ambient. In the vacuum ambient, permanent electrical breakdown occurs as a result of the Joule self-heating arising from the applied voltage across both ends of the Si-NW. The resulting current abruptly declines from a maximum value at the breakdown voltage (V-BD) to zero. In addition, the thermal conductivity of the Si-NW is extracted from the V-BD values under the vacuum ambient and shows good agreement with previously reported results. While the breakdown of the Si-NW does not exhibit negative differential resistance under the vacuum ambient, it interestingly shows negative differential resistance with multiple resistances in the current-voltage characteristics under the air ambient, similar to the behavior of carbon nanotubes. This behavior is triggered by current-induced oxidation, which leads to the thermo-morphic transition observed by TEM analyses. Additionally, the current-induced oxidation is favorably applied to reduce the size of a Si-NW at a localized and designated point. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | CARBON NANOTUBE | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | ELECTRICAL BREAKDOWN | - |
dc.subject | DEVICES | - |
dc.subject | PERFORMANCE | - |
dc.subject | CONDUCTIVITY | - |
dc.subject | CIRCUITS | - |
dc.subject | MEMORY | - |
dc.title | Physical Observation of a Thermo-Morphic Transition in a Silicon Nanowire | - |
dc.type | Article | - |
dc.identifier.wosid | 000301945900052 | - |
dc.identifier.scopusid | 2-s2.0-84859137695 | - |
dc.type.rims | ART | - |
dc.citation.volume | 6 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 2378 | - |
dc.citation.endingpage | 2384 | - |
dc.citation.publicationname | ACS NANO | - |
dc.identifier.doi | 10.1021/nn2046295 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | thermo-morphic transition | - |
dc.subject.keywordAuthor | thermo-morphism | - |
dc.subject.keywordAuthor | silicon nanowire | - |
dc.subject.keywordAuthor | electrical breakdown | - |
dc.subject.keywordAuthor | air ambient | - |
dc.subject.keywordAuthor | vacuum ambient | - |
dc.subject.keywordAuthor | Joule heating | - |
dc.subject.keywordAuthor | self-heating | - |
dc.subject.keywordAuthor | current-induced oxidation | - |
dc.subject.keywordAuthor | oxidation | - |
dc.subject.keywordAuthor | thermal conductivity | - |
dc.subject.keywordAuthor | multiple resistance | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | CARBON NANOTUBE | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | ELECTRICAL BREAKDOWN | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | CONDUCTIVITY | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | MEMORY | - |
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