Nanoengineering Strategies for Metal-Insulator-Metal Electrostatic Nanocapacitors

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dc.contributor.authorHaspert, Lauren C.ko
dc.contributor.authorLee, Sang Bokko
dc.contributor.authorRubloff, Gary W.ko
dc.date.accessioned2013-03-12T13:51:52Z-
dc.date.available2013-03-12T13:51:52Z-
dc.date.created2013-01-09-
dc.date.created2013-01-09-
dc.date.issued2012-04-
dc.identifier.citationACS NANO, v.6, no.4, pp.3528 - 3536-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10203/102511-
dc.description.abstractNanostructures can improve the performance of electrical energy storage devices. Recently, metal-insulator-metal (MIM) electrostatic capacitors fabricated in a three-dimensional cylindrical nanotemplate of anodized aluminum oxide (AAO) porous film have shown profound Increase in device capacitance (100x or more) over planar structures. However, Inherent asperities at the top of the nanostructure template cause locally high field strengths and lead to low breakdown voltage. This severely limits the usable voltage, the associated energy density (1/2CV(2)), and thus the operational charge-discharge window of the device. We describe an electrochemical technique, complementary to the self-assembled template pore formation process in the AAO film, that provides nanoengineered topographies with significantly reduced local electric field concentrations, enabling breakdown fields up to 23 x higher (to >10 MV/cm) while reducing leakage current densities by 1 order of magnitude (to similar to 10(-10) A/cm(2)). In addition, we consider and optimize the AAO template and nanopore dimensions, increasing the capacitance per planar unit area by another 20%. As a result, the MIM nanocapacitor devices achieve an energy density of similar to 1.5 Wh/kg-the highest reported.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectATOMIC LAYER DEPOSITION-
dc.subjectANODIC POROUS ALUMINA-
dc.subjectCAPACITOR ARRAYS-
dc.subjectENERGY-STORAGE-
dc.subjectACID-SOLUTION-
dc.subjectFILMS-
dc.subjectCELL-
dc.subjectTIN-
dc.subjectBREAKDOWN-
dc.subjectDEVICES-
dc.titleNanoengineering Strategies for Metal-Insulator-Metal Electrostatic Nanocapacitors-
dc.typeArticle-
dc.identifier.wosid000303099300078-
dc.identifier.scopusid2-s2.0-84860370719-
dc.type.rimsART-
dc.citation.volume6-
dc.citation.issue4-
dc.citation.beginningpage3528-
dc.citation.endingpage3536-
dc.citation.publicationnameACS NANO-
dc.identifier.doi10.1021/nn300553r-
dc.contributor.nonIdAuthorHaspert, Lauren C.-
dc.contributor.nonIdAuthorRubloff, Gary W.-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorenergy storage-
dc.subject.keywordAuthornanoengineering-
dc.subject.keywordAuthormetal-insulator-metal capacitor-
dc.subject.keywordAuthoranodic aluminum oxide-
dc.subject.keywordAuthoratomic layer deposition-
dc.subject.keywordPlusATOMIC LAYER DEPOSITION-
dc.subject.keywordPlusANODIC POROUS ALUMINA-
dc.subject.keywordPlusCAPACITOR ARRAYS-
dc.subject.keywordPlusENERGY-STORAGE-
dc.subject.keywordPlusACID-SOLUTION-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusCELL-
dc.subject.keywordPlusTIN-
dc.subject.keywordPlusBREAKDOWN-
dc.subject.keywordPlusDEVICES-
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