DC Field | Value | Language |
---|---|---|
dc.contributor.author | Noh, Hyeon-Kyun | ko |
dc.contributor.author | Oh, Young-Jun | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-03-12T10:25:22Z | - |
dc.date.available | 2013-03-12T10:25:22Z | - |
dc.date.created | 2012-08-21 | - |
dc.date.created | 2012-08-21 | - |
dc.date.issued | 2012-08 | - |
dc.identifier.citation | PHYSICA B-CONDENSED MATTER, v.407, no.15, pp.2907 - 2910 | - |
dc.identifier.issn | 0921-4526 | - |
dc.identifier.uri | http://hdl.handle.net/10203/102033 | - |
dc.description.abstract | We perform first-principles density functional calculations to study the electronic structure of Ni/HfO2 and Ni/SiO2 interfaces and the effect of O-vacancy (V-O) defects on the Schottky barrier height and the effective work function. We generate two interface models in which Ni is placed on O-terminated HfO2 (1 0 0) and a-quartz (1 0 0) surfaces. As the concentration of V-O defects at the interface increases, the p-type Schottky barrier height tends to increase in the Ni/HfO2 interface, due to the reduction of interface dipoles, whereas it is less affected in the Ni/SiO2 interface. (C) 2011 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | SURFACE STATES | - |
dc.subject | WORK FUNCTION | - |
dc.title | Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces | - |
dc.type | Article | - |
dc.identifier.wosid | 000305790800022 | - |
dc.identifier.scopusid | 2-s2.0-84862008167 | - |
dc.type.rims | ART | - |
dc.citation.volume | 407 | - |
dc.citation.issue | 15 | - |
dc.citation.beginningpage | 2907 | - |
dc.citation.endingpage | 2910 | - |
dc.citation.publicationname | PHYSICA B-CONDENSED MATTER | - |
dc.identifier.doi | 10.1016/j.physb.2011.08.079 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | Ni work function | - |
dc.subject.keywordAuthor | Metal gate | - |
dc.subject.keywordAuthor | HfO2 | - |
dc.subject.keywordAuthor | Schottky barrier | - |
dc.subject.keywordPlus | SURFACE STATES | - |
dc.subject.keywordPlus | WORK FUNCTION | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.