DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, Jin-Woo | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.contributor.author | Meyyappan, M. | ko |
dc.date.accessioned | 2013-03-12T08:41:20Z | - |
dc.date.available | 2013-03-12T08:41:20Z | - |
dc.date.created | 2012-08-23 | - |
dc.date.created | 2012-08-23 | - |
dc.date.issued | 2012-06 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.33, no.6, pp.746 - 748 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/101811 | - |
dc.description.abstract | A gate-dielectric-last process is demonstrated on an independent double-gate FinFET as a test vehicle. After the source/drain (S/D) process, the dummy gate dielectric is selectively replaced with a liquid monomer that can be cured by ultraviolet treatment. The present scheme provides the benefits from both gate-first and gate-last processes. The replacement of the gate dielectric is a minor modification of the baseline of the gate-first process. Compared to the gate-last process, the gate dielectric last does not introduce process complexity or alter the design rule. As the gate dielectric is formed after the S/D, the thermal-budget issue can be mitigated. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | A Gate-Dielectric-Last Process via Photosolidification of Liquid Resin | - |
dc.type | Article | - |
dc.identifier.wosid | 000305835000002 | - |
dc.identifier.scopusid | 2-s2.0-84861702707 | - |
dc.type.rims | ART | - |
dc.citation.volume | 33 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 746 | - |
dc.citation.endingpage | 748 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2012.2189866 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Han, Jin-Woo | - |
dc.contributor.nonIdAuthor | Meyyappan, M. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Gate-dielectric-last process | - |
dc.subject.keywordAuthor | photopolymer | - |
dc.subject.keywordAuthor | replacement of gate dielectric | - |
dc.subject.keywordAuthor | ultraviolet (UV) curing | - |
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