DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Moon-Seok | ko |
dc.contributor.author | Hwang, Young-Hwan | ko |
dc.contributor.author | Kim, Sung-Ho | ko |
dc.contributor.author | Guo, Zheng | ko |
dc.contributor.author | Moon, Dong-Il | ko |
dc.contributor.author | Choi, Ji-Min | ko |
dc.contributor.author | Seol, Myeong-Lok | ko |
dc.contributor.author | Bae, Byeong-Soo | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-03-12T08:32:18Z | - |
dc.date.available | 2013-03-12T08:32:18Z | - |
dc.date.created | 2013-01-22 | - |
dc.date.created | 2013-01-22 | - |
dc.date.issued | 2012-12 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.101, no.24 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/101796 | - |
dc.description.abstract | Resistance random access memory (RRAM) composed of stacked aluminum (Al)/InGaZnO(IGZO)/Al is investigated with different gallium concentrations. The stoichiometric ratio (x) of gallium in the InGaxZnO is varied from 0 to 4 for intentional control of the concentration of the oxygen vacancies (V-O), which influences the electrical characteristics of the RRAM. No Ga in the IGZO (x = 0) significantly increases the value of V-O and leads to a breakdown of the IGZO. In contrast, a high Ga concentration (x = 4) suppresses the generation of V-O; hence, resistive switching is disabled. The optimal value of x is 2. Accordingly, enduring RRAM characteristics are achieved. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770073] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | AMORPHOUS OXIDE SEMICONDUCTORS | - |
dc.subject | MEMRISTOR | - |
dc.subject | FILMS | - |
dc.title | Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory | - |
dc.type | Article | - |
dc.identifier.wosid | 000312490000096 | - |
dc.identifier.scopusid | 2-s2.0-84871305008 | - |
dc.type.rims | ART | - |
dc.citation.volume | 101 | - |
dc.citation.issue | 24 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4770073 | - |
dc.contributor.localauthor | Bae, Byeong-Soo | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Guo, Zheng | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | AMORPHOUS OXIDE SEMICONDUCTORS | - |
dc.subject.keywordPlus | MEMRISTOR | - |
dc.subject.keywordPlus | FILMS | - |
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