DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, WK | ko |
dc.contributor.author | Choi, Si-Kyung | ko |
dc.contributor.author | Lee, HyuckMo | ko |
dc.date.accessioned | 2009-07-21T05:38:40Z | - |
dc.date.available | 2009-07-21T05:38:40Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999-12 | - |
dc.identifier.citation | JOURNAL OF MATERIALS RESEARCH, v.14, no.12, pp.4677 - 4684 | - |
dc.identifier.issn | 0884-2914 | - |
dc.identifier.uri | http://hdl.handle.net/10203/10151 | - |
dc.description.abstract | The epitaxial PbTiO3 thin films of different thickness were prepared on MgO(001) substrates by the reactive direct-current magnetron sputtering. The volume fraction of c domains, alpha, which was measured by x-ray diffractometry, increased rapidly from zero with the film thickness, being saturated at about 90% above 100 nm. The films were annealed in a PbO atmosphere at 700 degrees C for 8 h, and they were used to study the composition change in the Pb/(Pb + Ti) ratio and the relaxation of the residual intrinsic stress. The relationship between change of alpha and composition was weak. The stress state was calculated through the finite-element method. As for the small thickness, the tensile epitaxial stress overwhelmed compressive intrinsic and thermal stresses, and the domain structure was a-domain oriented. As for the large thickness, the compressive intrinsic stress together with the thermal stress overcame the tensile epitaxial stress, and the population turned into c domain. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | MATERIALS RESEARCH SOCIETY | - |
dc.subject | FERROELECTRIC THIN-FILMS | - |
dc.subject | INTRINSIC STRESS | - |
dc.subject | RELAXATION | - |
dc.subject | DEPENDENCE | - |
dc.subject | ORIGIN | - |
dc.subject | STRAIN | - |
dc.title | Relationship between domain structure and film thickness in epitaxial PbTiO3 films deposited on Mg(001) by reactive sputtering | - |
dc.type | Article | - |
dc.identifier.wosid | 000084155000032 | - |
dc.identifier.scopusid | 2-s2.0-0033353868 | - |
dc.type.rims | ART | - |
dc.citation.volume | 14 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 4677 | - |
dc.citation.endingpage | 4684 | - |
dc.citation.publicationname | JOURNAL OF MATERIALS RESEARCH | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Choi, Si-Kyung | - |
dc.contributor.localauthor | Lee, HyuckMo | - |
dc.contributor.nonIdAuthor | Choi, WK | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FERROELECTRIC THIN-FILMS | - |
dc.subject.keywordPlus | INTRINSIC STRESS | - |
dc.subject.keywordPlus | RELAXATION | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | ORIGIN | - |
dc.subject.keywordPlus | STRAIN | - |
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