DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Byoung-Hyo | ko |
dc.contributor.author | Lee, Won-Jong | ko |
dc.date.accessioned | 2013-03-12T05:44:26Z | - |
dc.date.available | 2013-03-12T05:44:26Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2011-02 | - |
dc.identifier.citation | KOREAN JOURNAL OF MATERIALS RESEARCH, v.21, no.2, pp.95 - 99 | - |
dc.identifier.issn | 1225-0562 | - |
dc.identifier.uri | http://hdl.handle.net/10203/101462 | - |
dc.description.abstract | The microstructure and Cu diffusion barrier property of Ta-Si-N films for various Si and N compositions were studied. Ta-Si-N films of a wide range of compositions (Si: 0~30 at.%, N: 0~55 at.%) were deposited by DC magnetron reactive sputtering of Ta and Si targets. Deposition rates of Ta and Si films as a function of DC target current density for various N2/(Ar + N2) flow rate ratios were investigated. The composition of Ta-Si-N films was examined by wavelength dispersive spectroscopy (WDS). The variation of the microstructure of Ta-Si-N films with Si and N composition was examined by X-ray diffraction (XRD). The degree of crystallinity of Ta-Si-N films decreased with increasing Si and N composition. The Cu diffusion barrier property of Ta-Si-N films with more than sixty compositions was investigated. The Cu(100 nm)/Ta-Si-N(30 nm)/Si structure was used to investigate the Cu diffusion barrier property of Ta-Si-N films. The microstructure of all Cu/Ta-Si-N/Si structures after heat treatment for 1 hour at various temperatures was examined by XRD. A contour map that shows the diffusion barrier failure temperature for Cu as a function of Si and N composition was completed. At Si compositions ranging from 0 to 15 at.%, the Cu diffusion barrier property was best when the composition ratio of Ta + Si and N was almost identical. | - |
dc.language | Korean | - |
dc.publisher | The Korea Federation of Science and Technology | - |
dc.title | Crystalline structure and Cu diffusion barrier property of Ta-Si-N films | [Ta-Si-N Korean source] | - |
dc.title.alternative | Ta-Si-N박막의 조성에 따른 결정구조 및 구리 확산 방지 특성 연구 | - |
dc.type | Article | - |
dc.identifier.scopusid | 2-s2.0-79955133653 | - |
dc.type.rims | ART | - |
dc.citation.volume | 21 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 95 | - |
dc.citation.endingpage | 99 | - |
dc.citation.publicationname | KOREAN JOURNAL OF MATERIALS RESEARCH | - |
dc.contributor.localauthor | Lee, Won-Jong | - |
dc.contributor.nonIdAuthor | Jung, Byoung-Hyo | - |
dc.subject.keywordAuthor | Cu | - |
dc.subject.keywordAuthor | Diffusion barrier | - |
dc.subject.keywordAuthor | Metallization | - |
dc.subject.keywordAuthor | Ta-Si-N film | - |
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