DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Dong-Hun | ko |
dc.contributor.author | Cho, Nam-Gyu | ko |
dc.contributor.author | Kim, Ho-Gi | ko |
dc.contributor.author | Kim, Il-Doo | ko |
dc.date.accessioned | 2013-03-12T00:43:33Z | - |
dc.date.available | 2013-03-12T00:43:33Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010 | - |
dc.identifier.citation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.11, pp.370 - 372 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | http://hdl.handle.net/10203/100861 | - |
dc.description.abstract | This study reports the enhanced electrical properties of InGaZnO4 thin film transistors (TFTs) with sputter-deposited poly(methyl methacrylate) (PMMA)/Ba0.6Sr0.4TiO3 (BST) stacked gate dielectrics. A noticeable reduction in the leakage current density (similar to 10(-8) A/cm(2) at 0.3 MV) was achieved by coating a PMMA overlayer. The InGaZnO4 TFTs utilizing the PMMA (30 nm)/BST (270 nm) stacked gate dielectrics exhibited a high on/off current ratio of 2.6 X 10(6), a high field effect mobility of 10.2 cm(2)/V center dot s, and a low threshold voltage of 1.1 V. Using stacked gate dielectric layers, we realized the low voltage operating InGaZnO4 TFTs on a poly(ethylene terephthalate) substrate. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3479689] All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | ORGANIC TRANSISTORS | - |
dc.subject | INSULATORS | - |
dc.title | Low Voltage Operating InGaZnO4 Thin Film Transistors with Sputter-Deposited PMMA/High-k BST Stacked Gate Dielectric Layers | - |
dc.type | Article | - |
dc.identifier.wosid | 000283193300025 | - |
dc.identifier.scopusid | 2-s2.0-77956562443 | - |
dc.type.rims | ART | - |
dc.citation.volume | 13 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 370 | - |
dc.citation.endingpage | 372 | - |
dc.citation.publicationname | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.identifier.doi | 10.1149/1.3479689 | - |
dc.contributor.localauthor | Kim, Ho-Gi | - |
dc.contributor.localauthor | Kim, Il-Doo | - |
dc.contributor.nonIdAuthor | Kim, Dong-Hun | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ORGANIC TRANSISTORS | - |
dc.subject.keywordPlus | INSULATORS | - |
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