A Comprehensive Study of the Resistive Switching Mechanism in Al/TiOx/TiO2/Al-Structured RRAM
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Sung-Ho | ko |
| dc.contributor.author | Choi, Yang-Kyu | ko |
| dc.date.accessioned | 2013-03-12T00:32:40Z | - |
| dc.date.available | 2013-03-12T00:32:40Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2009-12 | - |
| dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.12, pp.3049 - 3054 | - |
| dc.identifier.issn | 0018-9383 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/100837 | - |
| dc.description.abstract | The conduction mechanism and resistive switching properties in a resistive-random-access-memory device composed of Al(top)/TiOx/TiO2/Al(bottom) are investigated in this paper. The active-top-electrode (TE) material aluminum interacted with the TiO2 layer and induced an oxygen-deficient TiOx layer near the TE. The naturally formed oxygen-deficient TiOx layer was confirmed by a transmission-electron-microscope energy-dispersive X-ray spectrometry analysis. The oxygen-deficient TiOx region acted as a trap for electrons and contributed to the resistive switching. The proposed mechanism and measured data are verified through simulation of a two-variable resistor model. | - |
| dc.language | English | - |
| dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | - |
| dc.subject | FILMS | - |
| dc.title | A Comprehensive Study of the Resistive Switching Mechanism in Al/TiOx/TiO2/Al-Structured RRAM | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000271951700022 | - |
| dc.identifier.scopusid | 2-s2.0-77956032359 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 56 | - |
| dc.citation.issue | 12 | - |
| dc.citation.beginningpage | 3049 | - |
| dc.citation.endingpage | 3054 | - |
| dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.identifier.doi | 10.1109/TED.2009.2032597 | - |
| dc.contributor.localauthor | Choi, Yang-Kyu | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | Oxygen vacancy | - |
| dc.subject.keywordAuthor | resistive random access memory (RRAM) | - |
| dc.subject.keywordAuthor | resistive switching | - |
| dc.subject.keywordAuthor | TiOx | - |
| dc.subject.keywordPlus | FILMS | - |
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