DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Sung-Jin | ko |
dc.contributor.author | Han, Jin-Woo | ko |
dc.contributor.author | Moon, Dong-Il | ko |
dc.contributor.author | Jang, Moon-Gyu | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-03-12T00:06:30Z | - |
dc.date.available | 2013-03-12T00:06:30Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-01 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.31, no.1, pp.71 - 73 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/100749 | - |
dc.description.abstract | This letter is aimed at experimentally investigating the fin width (W-fin) dependence of both a dopant-segregated Schottky-barrier (DSSB) and a conventional FinFET SONOS device with diffused p-n junctions for application of a NOR-type flash memory device. High parasitic resistance (R-para) at the source/drain by a narrowed W-fin results in degradation of memory performance for the conventional FinFET SONOS device. In contrast, it is shown that a narrow W-fin significantly improves the memory performance for the DSSB FinFET SONOS device, resulting from an improved lateral electric field without a significant change of the R-para value. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Fin Width (W-fin) Dependence of Programming Characteristics on a Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS Device for a NOR-Type Flash Memory Device | - |
dc.type | Article | - |
dc.identifier.wosid | 000273090800025 | - |
dc.identifier.scopusid | 2-s2.0-72949108452 | - |
dc.type.rims | ART | - |
dc.citation.volume | 31 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 71 | - |
dc.citation.endingpage | 73 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2009.2035142 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Jang, Moon-Gyu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Dopant segregation | - |
dc.subject.keywordAuthor | dopant-segregated Schottky-barrier (DSSB) | - |
dc.subject.keywordAuthor | FinFET | - |
dc.subject.keywordAuthor | fin width | - |
dc.subject.keywordAuthor | flash memory | - |
dc.subject.keywordAuthor | Schottky barrier | - |
dc.subject.keywordAuthor | SONOS | - |
dc.subject.keywordAuthor | source-side injection | - |
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