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Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering Goh, Youngin; Hwang, Junghyeon; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.12, no.51, pp.57539 - 57546, 2020-12 |
Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays Goh, Youngin; Hwang, Junghyeon; Kim, Minki; Lee, Yongsun; Jung, Minhyun; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.13, no.49, pp.59422 - 59430, 2021-12 |
Study on the electrical characteristics of MgO & Graphene tunnel junctions for spintronics device applications = 스핀트로닉스 소자를 위한 MgO 및 그래핀 터널접합의 전기적 특성에 관한 연구link Baek, Seung-Heon; 백승헌; et al, 한국과학기술원, 2013 |
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