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(A) study on the femtosecond laser ablation of germanium single crystal = 게르마늄 단결정의 펨토초 레이저 어블레이션에 관한 연구link Park, Myung-Il; 박명일; et al, 한국과학기술원, 2005 |
Atomic and electronic structure of acetic acid on Ge(100) Kim, DH; Hwang, E; Hong, S; Kim, Sehun, SURFACE SCIENCE, v.600, no.18, pp.3629 - 3632, 2006-09 |
Controlled recrystallization for low-current RESET programming characteristics of phase-change memory with Ge-doped SbTe Wu, Zhe; Zhang, Gang; Park, Young-Wook; Kang, Stephen D.; Lyeo, Ho-Ki; Jeong, Doo-Seok; Jeong, Jeung-hyun; et al, APPLIED PHYSICS LETTERS, v.99, no.14, 2011-10 |
Development of process technology for high performance Ge MOSFETs = 단위 공정 연구를 통한 고성능 게르마늄 소자 개발link Seo, Yu Jin; 서유진; et al, 한국과학기술원, 2017 |
Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure Kim, Gwang-Sik; Yoo, Gwangwe; Seo, Yujin; Kim, Seung-Hwan; Cho, Karam; Cho, Byung-Jin; Shin, Changhwan; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.709 - 712, 2016-06 |
Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET Ahn, Juhan; Kim, Jeong-Kyu; Kim, Sun-Woo; Kim, Gwang-Sik; Shin, Changhwan; Kim, Jong-Kook; Cho, Byung-Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.705 - 708, 2016-06 |
Effect of substrate temperature on the texture and structure of polycrystalline Si0.7Ge0.3 films deposited on SiO2 by molecular beam deposition Kim, HS; Lee, JeongYong, THIN SOLID FILMS, v.350, no.1-2, pp.14 - 20, 1999-08 |
Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack Kim, Gwang-Sik; Kim, Sun-Woo; Kim, Seung-Hwan; Park, June; Seo, Yujin; Cho, Byung-Jin; Shin, Changhwan; et al, ACS APPLIED MATERIALS INTERFACES, v.8, no.51, pp.35419 - 35425, 2016-12 |
Energy band structure of the single crystalline MgO/n-Ge(001) heterojunction determined by x-ray photoelectron spectroscopy Jeon, Kun-Rok; Lee, Sang-Jun; Park, Chang-Yup; Lee, Hun-Sung; Shin, Sung-Chul, APPLIED PHYSICS LETTERS, v.97, no.11, 2010-09 |
Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2 Seo, Yujin; Lee, Tae In; Ahn, Hyunjun; Moon, Jungmin; Hwang, Wan Sik; Yu, Hyun-Yong; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.4242 - 4245, 2017-10 |
Fermi-Level Unpinning Technique with Excellent Thermal Stability. for n-Type Germanium Kim, Gwang-Sik; Kim, Seung-Hwan; Lee, Tae In; Cho, Byung Jin; Choi, Changhwan; Shin, Changhwan; Shim, Joon Hyung; et al, ACS APPLIED MATERIALS & INTERFACES, v.9, no.41, pp.35988 - 35997, 2017-10 |
Grain Size Engineering using Amorphous-Ge/Si Stack to Enhance Channel Mobility for NAND Flash Memory Lee, Tae In; Kim, Min Ju; Shin, Eui Joong; Lee, Gyusoup; Jeong, Jaejoong; Lee, Yun Hee; Lee, Jung Hoon; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.10, pp.5940 - 5943, 2022-10 |
How Many O-Donor Groups in Enterobactin Does It Take to Bind a Metal Cation? Baramov, Todor; Schmid, Bianca; Ryu, Ho; Jeong, Jinhoon; Keijzer, Karlijn; von Eckardstein, Leonard; Baik, Mu-Hyun; et al, CHEMISTRY-A EUROPEAN JOURNAL, v.25, no.28, pp.6955 - 6962, 2019-05 |
Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature Wu, Zhe; Lee, Su-Youn; Park, Young-Wook; Ahn, Hyung-Woo; Jeong, Doo-Seok; Jeong, Jeung-hyun; No, Kwang-Soo; et al, APPLIED PHYSICS LETTERS, v.96, no.13, 2010-03 |
Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks Seo, Yujin; Kim, Choong-Ki; Lee, Tae-In; Hwang, Wan Sik; Yu, Hyun-Yong; Choi, Yang-Kyu; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.3998 - 4001, 2017-10 |
Nanocrystal-mediated crystallization of silicon and germanium nanowires in organic solvents: The role of catalysis and solid-phase seeding Tuan, HY; Lee, DohChang; Korgel, BA, ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, v.45, no.31, pp.5184 - 5187, 2006 |
Performance Assessment of III-V Channel Ultra-Thin-Body Schottky-Barrier MOSFETs Lee, Jaehyun; Shin, Mincheol, IEEE ELECTRON DEVICE LETTERS, v.35, no.7, pp.726 - 728, 2014-07 |
Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET With Metal-Interlayer-Semiconductor Source/Drain Shin, Changho; Kim, Jeong-Kyu; Kim, Gwang-Sik; Lee, Hyunjae; Shin, Changhwan; Kim, Jong-Kook; Cho, Byung-Jin; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.11, pp.4167 - 4172, 2016-11 |
Reactivity towards O-2 and H2O of the alkali-metal induced Ge(111)-3 x 1 surfaces: contrasting adsorption rates for different alkali metals Lee, G; Lee, JY; Kim, Sehun; Cho, EJ, SURFACE SCIENCE, v.532, pp.764 - 768, 2003-06 |
Reduction of charge trapping in HfO2 film on a Ge substrate by trimethylaluminum pretreatment Lee, Jae Jin; Shin, Yunsang; Choi, Juyun; Kim, Hyoungsub; Hyun, Sangjin; Choi, Siyoung; Cho, Byung Jin; et al, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.6, no.11, pp.439 - 441, 2012-11 |
Strain-Induced Pseudoheterostructure Nanowires Confining Carriers at Room Temperature with Nanoscale-Tunable Band Profiles Nam, Donguk; Sukhdeo, David S.; Kang, Ju-Hyung; Petykiewicz, Jan; Lee, Jae Hyung; Jung, Woo Shik; Vuckovic, Jelena; et al, NANO LETTERS, v.13, no.7, pp.3118 - 3123, 2013-07 |
Strained germanium nanowire optoelectronic devices for photonic-integrated circuits Qi, Zhipeng; Sun, Hao; Luo, Manlin; Jung, Yongduck; Nam, Donguk, JOURNAL OF PHYSICS-CONDENSED MATTER, v.30, no.33, 2018-08 |
Surface electronic properties of Na/Ge(111)-3x1 Kim, JW; Seo, JM; Kim, Sehun, SURFACE SCIENCE, v.351, no.1-3, pp.239 - 244, 1996-05 |
Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET Kim, Gwang-Sik; Kim, Seung-Hwan; Kim, Jeong-Kyu; Shin, Changhwan; Park, Jin-Hong; Saraswat, Krishna C.; Cho, Byung Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.36, no.8, pp.745 - 747, 2015-08 |
Synthesis and Structural Characterization of Hexacoordinate Silicon, Germanium, and Titanium Complexes of the E-coli Siderophore Enterobactin Baramov, Todor; Keijzer, Karlijn; Irran, Elisabeth; Moesker, Eva; Baik, Mu-Hyun; Suessmuth, Roderich, CHEMISTRY-A EUROPEAN JOURNAL, v.19, no.32, pp.10536 - 10542, 2013-08 |
Synthesis of Silicate Zeolite Analogues Using Organic Sulfonium Compounds as Structure-Directing Agents Jo, Changbum; Lee, Sungjune; Cho, Sung June; Ryoo, Ryong, ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, v.54, no.43, pp.12805 - 12808, 2015-10 |
Temperature and bias dependence of Hanle effect in CoFe/MgO/composite Ge Jeon, Kun-Rok; Min, Byoung-Chul; Park, Youn-Ho; Lee, Hun-Sung; Park, Chang-Yup; Jo, Young-Hun; Shin, Sung-Chul, APPLIED PHYSICS LETTERS, v.99, no.16, 2011-10 |
The Efficacy of Metal-Interfacial Layer-Semiconductor Source/Drain Structure on Sub-10-nm n-Type Ge FinFET Performances Kim, Jeong-Kyu; Kim, Gwang-Sik; Nam, Hyohyun; Shin, Changhwan; Park, Jin-Hong; Kim, Jong-Kook; Cho, Byung-Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.35, no.12, pp.1185 - 1187, 2014-12 |
Vacancy clustering and diffusion in germanium using kinetic lattice Monte Carlo simulations Kang J.W.; Choi Y.G.; Lee J.H.; Lee S.H.; Oh H.J., MOLECULAR SIMULATION, v.35, no.3, pp.234 - 240, 2009 |
XRD studies on the femtosecond laser ablated single-crystal germanium in air Park, MI; Kim, CS; Park, Chong-Ook; Jeoung, SC, OPTICS AND LASERS IN ENGINEERING, v.43, no.12, pp.1322 - 1329, 2005-12 |
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