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Formation and properties of epitaxial CoSi2 layers on p-Si0.83Ge0.17/p-Si(001) using a Si capping layer by metal-organic chemical vapor deposition Ban, SH; Shin, DO; Ahn, YS; Ahn, Byung Tae; Shim, KH; Lee, NE, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.42, pp.3350 - 3353, 2003-06 |
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