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Showing results 1 to 4 of 4

1
A high performance MIM capacitor using HfO(2) dielectrics

Hu, H; Zhu, CX; Lu, YF; Li, MF; Cho, Byung Jin; Choi, WK, IEEE ELECTRON DEVICE LETTERS, v.23, no.9, pp.514 - 516, 2002-09

2
A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectrics

Yu, XF; Zhu, CX; Hu, H; Chin, A; Li, MF; Cho, Byung Jin; Kwong, DL; et al, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.63 - 65, 2003-02

3
Low-Frequency Noise Performance of a Bilayer InZnO-InGaZnO Thin-Film Transistor for Analog Device Applications

Jeon, Sanghun; Kim, Sun Il; Park, Sungho; Song, Ihun; Park, Jaechul; Kim, Sangwook; Kim, Changjung, IEEE ELECTRON DEVICE LETTERS, v.31, no.10, pp.1128 - 1130, 2010-10

4
MIM capacitors using atomic-layer-deposited high-kappa (HfO2)(1-x)(Al2O3)(x) dielectrics

Hu, H; Zhu, CX; Yu, XF; Chin, A; Li, MF; Cho, Byung Jin; Kwong, DL; et al, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.60 - 62, 2003-02

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