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Showing results 1 to 11 of 11

1
Band bending effect induced by gate voltage on the charge loss behavior of charge trap flash memory devices

Chang, M.; Hwang, H.; Jeon, Sanghun., APPLIED PHYSICS LETTERS, v.96, no.5, 2010-02

2
Exchangeable self-curable liquid gate dielectric embedded field effect transistor

Han, Jin-Woo; Ahn, Jae-Hyuk; Lee, Jeong-Oen; Yoon, Jun-Bo; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.97, no.3, 2010-07

3
Extending the nanocluster-Si/erbium sensitization distance in Er-doped silicon nitride: The role of Er-Er energy migration

Kim, In Yong; Shin, JungHoon; Kim, Kyung Joong, APPLIED PHYSICS LETTERS, v.95, no.22, 2009-11

4
Extraction of carriers photogenerated at p type amorphous SiC window layer in amorphous Si solar cells

Baik, Seung Jae; Kang, Sang Jung; Lim, Koeng Su, APPLIED PHYSICS LETTERS, v.97, no.12, pp.122102, 2010-09

5
Shrinkage and expansion mechanisms of SiO(2) elliptical membrane nanopores

Shin, Jae Won; Lee, JeongYong; Oh, Do Hyun; Kim, Tae Whan; Cho, Woon Jo, APPLIED PHYSICS LETTERS, v.93, no.22, 2008-12

6
Si-containing block copolymers for self-assembled nanolithography

Ross, CA; Jung, Yeon Sik; Chuang, VP; Ilievski, F; Yang, JKW; Bita, I; Thomas, EL; et al, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.26, no.6, pp.2489 - 2494, 2008-11

7
Tailoring UV cure depth profiles for optimal mechanical properties of organosilicate thin films

Kim, Taek-Soo; Chumakov, Dmytro; Zschech, Ehrenfried; Dauskardt, Reinhold H., APPLIED PHYSICS LETTERS, v.95, no.7, 2009-08

8
TiN/PECVD-Si3N4/TiN diaphragm-based capacitive-type MEMS acoustic sensor

Lee, Jae Woo; Jeon, J. H.; Kim, Y. G.; Lee, S. Q.; Yang, W. S.; Lee, Jungsoo; Lee, Sang-Gug, ELECTRONICS LETTERS, v.52, no.6, pp.468 - 469, 2016-03

9
Transient charge trapping and detrapping properties of a thick SiO2/Al2O3 stack studied by short single pulse I-d-V-g

Chang, Man; Jo, Minseok; Jung, Seungjae; Lee, Joonmyoung; Jeon, Sanghun; Hwang, Hyunsang, APPLIED PHYSICS LETTERS, v.94, no.26, 2009-06

10
Tungsten oxide as a buffer layer inserted at the SnO2/p-a-SiC interface of pin-type amorphous silicon based solar cells

Fang, Liang; Baik, Seung-Jae; Lim, Koeng-Su; Yoo, Seung-Hyup; Seo, Myung-Soo; Kang, Sang-Jung; Seo, Jung-Won, APPLIED PHYSICS LETTERS, v.96, no.19, pp.193501, 2010-05

11
Wide memory window in graphene oxide charge storage nodes

Wang, Shuai; Pu, Jing; Chan, Daniel S. H.; Cho, Byung Jin; Loh, Kian Ping, APPLIED PHYSICS LETTERS, v.96, no.14, 2010-04

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