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Showing results 1 to 4 of 4

1
Electronic subband structure in InAs-GaAs quantum dots in an asymmetric-well infrared photodetector structure

Nam, H; Song, JD; Choi, WJ; Lee, JI; Yang, H; Kwack, HS; Cho, Yong-Hoon, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.47, pp.1002 - 1005, 2005-12

2
High-response i-InAs/n-GaAs quantum-dot infrared photodetector with no current blocking barrier

Lee, SJ; Noh, SK; Choe, JW; Lee, UH; Hong, Songcheol; Lee, JI, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.43, no.3, pp.1218 - 1220, 2004-03

3
Normal-incidence far-infrared detectivity of InAs/GaAs QDIPs doped in dots and barriers

Lee, SJ; Noh, SK; Hong, Songcheol; Lee, JI, CURRENT APPLIED PHYSICS, v.6, no.1, pp.37 - 40, 2006-01

4
Theoretical optimization of a vertical quantum dot infrared photodetector structure

Lee, UH; Kang, YH; Oum, JH; Yang, JR; Hong, Songcheol; Lee, SJ; Noh, SK, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no.2, pp.529 - 533, 2004-08

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