Browse by Subject gallium oxide(Ga2O3)▼agas sensor▼adisplay▼aamorphous▼aultrathin▼aRF magnetron sputtering▼aSn doping▼ahydrogen annealing▼amobility
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| Fabrication of ultrathin(sub-6 nm) Sn doped amorphous gallium oxide field effect transistor with enhanced mobility = 향상된 이동도를 갖는 초박막(6 nm 이하) 주석 도핑된 비정질의 산화갈륨 전계 효과 트랜지스터 제작link Kim, Eui Joon; Cho, Byung Jin; 조병진; Hwang, Wansik; et al, 한국과학기술원, 2021 |
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