Browse by Subject gallium oxide(Ga2O3)▼agas sensor▼adisplay▼aamorphous▼aultrathin▼aRF magnetron sputtering▼aSn doping▼ahydrogen annealing▼amobility
Showing results 1 to 1 of 1
| Fabrication of ultrathin(sub-6 nm) Sn doped amorphous gallium oxide field effect transistor with enhanced mobility = 향상된 이동도를 갖는 초박막(6 nm 이하) 주석 도핑된 비정질의 산화갈륨 전계 효과 트랜지스터 제작link Kim, Eui Joon; Cho, Byung Jin; 조병진; Hwang, Wansik; et al, 한국과학기술원, 2021 |
Discover
Type
Open Access
Date issued
- 31,345 2020 - 2024
- 99,975 2010 - 2019
- 75,670 2000 - 2009
- 44,727 1990 - 1999
- 14,360 1980 - 1989
- 62 1964 - 1969