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Showing results 1 to 5 of 5

1
A 42-GHz (f(max)) SiGe-base HBT using reduced pressure CVD

Cho, DH; Ryum, BR; Han, TH; Lee, SM; Shin, Sung-Chul; Lee, C, SOLID-STATE ELECTRONICS, v.42, no.9, pp.1641 - 1649, 1998-09

2
EFFECT OF THE SILICIDATION REACTION CONDITION ON THE GATE OXIDE INTEGRITY IN TI-POLYCIDE GATE

LEE, NI; KIM, YW; AHN, ST, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.33, no.1B, pp.672 - 677, 1994-01

3
FORMATION AND EPITAXIAL-GROWTH OF TITANIUM-DISILICIDE ON SI (111)

CHOI, CK; PARK, HH; Lee, JeongYong; CHO, KI; PAEK, MC; KWON, OJ; KIM, KH; et al, JOURNAL OF CRYSTAL GROWTH, v.115, no.1-4, pp.579 - 588, 1991-12

4
FORMATION OF EPI-C49 TISI2/SI(111) BY SOLID-PHASE EPITAXIAL-GROWTH

CHOI, CK; YANG, SJ; RYU, JY; Lee, JeongYong; LEE, YP; PARK, HH; LEE, EW; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.26, no.2, pp.148 - 152, 1993-04

5
High-temperature oxidation behaviors of ZrSi2 and its coating on the surface of Zircaloy-4 tube by laser 3D printing

Kim, Jae Joon; Kim, Hyun Gil; Ryu, Ho Jin, NUCLEAR ENGINEERING AND TECHNOLOGY, v.52, no.9, pp.2054 - 2063, 2020-09

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