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Showing results 1 to 6 of 6

1
Principle of ferroelectric domain imaging using atomic force microscope

Hong, Daniel Seungbum; Woo, J; Shin, H; Jeon, JU; Pak, YE; Colla, EL; Setter, N; et al, JOURNAL OF APPLIED PHYSICS, v.89, no.2, pp.1377 - 1386, 2001-01

2
Quantitative analysis of the bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices using atomic force microscopy

Woo, J; Hong, Daniel Seungbum; Setter, N; Shin, H; Jeon, JU; Pak, YE; No, Kwangsoo, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.19, no.3, pp.818 - 824, 2001

3
Re-entrant relaxor ferroelectricity of methylammonium lead iodide

Guo, Haiyan; Liu, Peixue; Zheng, Shichao; Zeng, Shixian; Liu, Na; Hong, Daniel Seungbum, CURRENT APPLIED PHYSICS, v.16, no.12, pp.1603 - 1606, 2016-12

4
Size and top electrode-edge effects on fatigue in Pb(Zr,Ti)O-3 capacitors with Pt-electrodes

Torii, K; Colla, EL; Song, HW; Tagantsev, AK; No, Kwangsoo; Setter, N, INTEGRATED FERROELECTRICS, v.32, no.1-4, pp.907 - 916, 2001

5
Stability and read/write characteristics of nano ferroelectric domains

No, Kwangsoo; Song, HW; Hong, J; Woo, J; Shin, H; Hong, Daniel Seungbum, FERROELECTRICS, v.259, no.1-4, pp.289 - 298, 2001

6
Three-dimensional ferroelectric domain imaging of bulk Pb(Zr,Ti)O-3 by atomic force microscopy

Hong, S; Ecabart, B; Colla, EL; Setter, N, APPLIED PHYSICS LETTERS, v.84, no.13, pp.2382 - 2384, 2004-03

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