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Showing results 1 to 5 of 5

1
(A) study on the variational formulation for the semiconductor device applications = 반도체 소자 모델링을 위한 변분법에 관한 연구link

Lee, Chang-Yeol; 이창렬; et al, 한국과학기술원, 1997

2
DETERMINATION OF FLAT-BAND VOLTAGES FOR FULLY DEPLETED SILICON-ON-INSULATOR (SOI) METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MOSFETS)

J-S Lyu; K-S Nam; Lee, Choochon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.31, no.9A, pp.2678 - 2681, 1992

3
Fin-Width Dependence of BJT-Based 1T-DRAM Implemented on FinFET

Moon, Dong-Il; Choi, Sung-Jin; Han, Jin-Woo; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.31, no.9, pp.909 - 911, 2010-09

4
Mimicry of Excitatory and Inhibitory Artificial Neuron with Leaky Integrate-and-Fire Function by a Single MOSFET

Han, Joon-Kyu; Seo, Myungsoo; Kim, Wu-Kang; Kim, Moon-Seok; Kim, Seong-Yeon; Kim, Myung-Su; Yun, Gyeong-Jun; et al, IEEE ELECTRON DEVICE LETTERS, v.41, no.2, pp.208 - 211, 2020-02

5
Ultra shallow and abrupt n(+)-p junction formations on silicon-on-insulator by solid phase diffusion of arsenic from spin-on-dopant for sub 50 nm Si metal-oxide-semiconductor devices

Oh, Jihun; Im, K; Ahn, CG; Yang, JH; Cho, WJ; Lee, S; Park, K, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.110, no.2, pp.185 - 189, 2004-07

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