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Showing results 1 to 7 of 7

1
A study on low dielectric material deposition using a helicon plasma source

Kim, JH; Seo, SH; Yun, SM; Chang, Hong-Young; Lee, KM; Choi, CK, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.143, no.9, pp.2990 - 2995, 1996-09

2
HIGH-FIELD BREAKDOWN IN THIN OXIDES GROWN IN N2O AMBIENT

JOSHI, AB; Yoon, Giwan; KIM, JH; LO, GQ; KWONG, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.40, no.8, pp.1437 - 1445, 1993-08

3
Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides

Ang, CH; Ling, CH; Cho, Byung Jin; Kim, SJ; Cheng, ZY, SOLID-STATE ELECTRONICS, v.44, no.11, pp.2001 - 2007, 2000-11

4
Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate bias

Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jin, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.39, no.7B, pp.757 - 759, 2000-07

5
Reduction of stress-induced leakage currents in thin oxides by application of a low post-stress gate bias

Ang, CH; Ling, CH; Cheng, ZY; Cho, Byung Jin; Kim, SJ, JOURNAL OF APPLIED PHYSICS, v.88, no.5, pp.3087 - 3089, 2000-09

6
The deposition of SiOF film with low dielectric constant in a helicon plasma source

Kim, JH; See, SH; Yun, SM; Chang, Hong-Young; Lee, KM; Choi, CK, APPLIED PHYSICS LETTERS, v.68, no.11, pp.1507 - 1509, 1996-03

7
The origin of intrinsic stress and its relaxation for SiOF thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Kim, SP; Choi, Si-Kyung, THIN SOLID FILMS, v.379, no.1-2, pp.259 - 264, 2000-12

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