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Showing results 1 to 5 of 5

1
Cobalt metallorganic chemical vapor deposition and formation of epitaxial CoSi2 layer on Si(100) substrate

Rhee, HS; Ahn, Byung Tae, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.146, no.7, pp.2720 - 2724, 1999-07

2
Epitaxial growth of a (100) CoSi2 layer from carbonic cobalt films deposited on (100) Si substrate using an organometallic source

Rhee, HS; Jang, TW; Ahn, Byung Tae, APPLIED PHYSICS LETTERS, v.74, no.7, pp.1003 - 1005, 1998-12

3
GROWTH MODE OF TI-THIN FILMS ON SI(111) AND DOUBLE HETEROEPITAXIAL GROWTH OF EPI-SI EPI-C54 TISI2 SI(111)

CHOI, CK; Lee, JeongYong; LEE, YP; PARK, HH; JUNG, SM; KIM, KH, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.26, no.4, pp.407 - 412, 1993-08

4
In situ growth of an epitaxial CoSi2 layer on a Si(100) substrate by reactive chemical-vapor deposition using a cobalt metallorganic source

Rhee, HS; Ahn, Byung Tae, APPLIED PHYSICS LETTERS, v.74, no.21, pp.3176 - 3178, 1999-05

5
IN-SITU SOLID-PHASE EPITAXIAL-GROWTH OF C49-TISI2 ON SI(111)-7X7 SUBSTRATE

CHOI, CK; YANG, SJ; RYU, JY; Lee, JeongYong; PARK, HH; KWON, OJ; LEE, YP; et al, APPLIED PHYSICS LETTERS, v.63, no.4, pp.485 - 487, 1993-07

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