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Dislocation reduction in GaN epilayers by maskless Pendeo-epitaxy process Park, DJ; Lee, JeongYong; Cho, HK; Hong, CH; Cheong, HS, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, pp.1253 - 1256, 2004-11 |
Multi-emission from InGaN/GaN multi-quantum wells grown on hexagonal GaN microstructures Kim, CS; Hong, YK; Hong, CH; Suh, EK; Lee, HJ; Kim, MH; Cho, HK; et al, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.228, no.1, pp.183 - 186, 2001-11 |
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