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Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates

Yu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.3, pp.138 - 140, 2004-03

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