Showing results 1 to 2 of 2
Multi-level cell storage with a modulated current method for phase-change memory using Ge-doped SbTe Zhang G.; Wu Z.; Jeong J.-H.; Jeong D.S.; Yoo W.J.; Cheong B.-K., CURRENT APPLIED PHYSICS, v.11, no.2, pp.E79 - E81, 2011-03 |
The effect of Ge addition on the RESET operation of a phase-change memory (PCM) device using Ge-doped SbTe Park Y.-w.; Lee H.S.; Ahn H.W.; Wu Z.; Lee S.; Jeong J.-h.; Jeong D.S.; et al, CURRENT APPLIED PHYSICS, v.10, no.1, pp.E79 - E82, 2010 |
Discover