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Showing results 1 to 4 of 4

1
Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates

Lee, Kyu-Seung; Isnaeni; Yoo, Yang-Seok; Lee, Jae-Hoon; Kim, Yong-Chun; Cho, Yong-Hoon, JOURNAL OF APPLIED PHYSICS, v.113, no.17, pp.173512-1 - 173512-5, 2013-05

2
Influence of Mg doping on structural defects in AlGaN layers grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Jeon, SR; Yang, GM, APPLIED PHYSICS LETTERS, v.79, no.23, pp.3788 - 3790, 2001-12

3
Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11-22) ones

Leroux, M.; Brault, J.; Kahouli, A.; Maghraoui, D.; Damilano, B.; de Mierry, P.; Korytov, M.; et al, JOURNAL OF APPLIED PHYSICS, v.116, no.3, pp.034308-1 - 034308-8, 2014-07

4
Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Jeon, SR; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.233, no.4, pp.667 - 672, 2001-12

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