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Showing results 1 to 5 of 5

1
Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy

Kim, HM; Kim, DS; Kim, DY; Kang, TW; Cho, Yong-Hoon; Chung, KS, APPLIED PHYSICS LETTERS, v.81, no.12, pp.2193 - 2195, 2002-09

2
Indium-related novel architecture of GaN nanorod grown by molecular beam epitaxy

Kim, YH; Lee, JeongYong; Lee, SH; Oh, JE; Lee, HS; Huh, Y, CHEMICAL PHYSICS LETTERS, v.412, pp.454 - 458, 2005-09

3
Porous GaN nanowires synthesized using thermal chemical vapor deposition

Bae, SY; Seo, HW; Park, J; Yang, H; Kim, Bongsoo, CHEMICAL PHYSICS LETTERS, v.376, no.3-4, pp.445 - 451, 2003-07

4
Synthesis and characterization of heterostructured Mn3GaN0.5/GaN nanowires

Ha, B; Kim, HC; Kang, SG; Kim, YH; Lee, JeongYong; Park, CY, CHEMISTRY OF MATERIALS, v.17, pp.5398 - 5403, 2005-11

5
Synthesis of aligned GaN nanorods on Si (111) by molecular beam epitaxy

Kim, YH; Lee, JeongYong; Lee, SH; Oh, JE; Lee, HS, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.80, pp.1635 - 1639, 2005-05

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