Showing results 1 to 16 of 16
A facile and low cost synthesis of earth abundant element Cu2ZnSnS4 (CZTS) nanocrystals: Effect of Cu concentrations Shin, Seung Wook; Han, Jun Hee; Park, Chan Yeong; Kim, Sae-Rok; Park, Yeon Chan; Agawane, G. L.; Moholkar, A. V.; et al, JOURNAL OF ALLOYS AND COMPOUNDS, v.541, pp.192 - 197, 2012-11 |
A simple and robust route toward flexible CIGS photovoltaic devices on polymer substrates: Atomic level microstructural analysis and local opto-electronic investigation Kim, Kihwan; Kim, Juran; Gang, Myeng Gil; Kim, Se-Ho; Song, Soomin; Cho, Yunae; Shin, Donghyeop; et al, SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.195, pp.280 - 290, 2019-06 |
Alignment of energy levels at the ZnS/Cu(In,Ga)Se-2 interface Larina, Liudmila; Shin, Dong-Hyeop; Kim, Ji-Hye; Ahn, Byung-Tae, ENERGY ENVIRONMENTAL SCIENCE, v.4, no.9, pp.3487 - 3493, 2011-09 |
Band alignment at the Cu2ZnSn(SxSe1-x)(4)/CdS interface Haight, Richard; Barkhouse, Aaron; Gunawan, Oki; Shin, Byungha; Copel, Matt; Hopstaken, Marinus; Mitzi, David B., APPLIED PHYSICS LETTERS, v.98, no.25, 2011-06 |
Crystallization behaviour of co-sputtered Cu2ZnSnS4 precursor prepared by sequential sulfurization processes Han, Junhee; Shin, Seung Wook; Gang, Myeong Gil; Kim, Jin Hyeok; Lee, Jeong Yong, NANOTECHNOLOGY, v.24, no.9, pp.095706, 2013-03 |
Effects of Cu/In Compositional Ratio on the Characteristics of CuInS2 Absorber Layers Prepared by Sulfurization of Metallic Precursors Lee, Seung Hwan; Shin, Seung Wook; Han, Jun Hee; Lee, JeongYong; Kang, Myeong Gil; Agawane, G. L.; Yun, Jae Ho; et al, ELECTRONIC MATERIALS LETTERS, v.8, no.2, pp.191 - 197, 2012-04 |
Feature issue introduction: light, energy and the environment, 2015 Yoo, Seunghyup; Sprafke, Alexander; Lipinski, Wojciech; Liu, Jianguo, OPTICS EXPRESS, v.24, no.10, 2016-05 |
Impact of annealing on electrical properties of Cu2ZnSnSe4 absorber layers Weiss, Thomas Paul; Redinger, Alex; Rey, Germain; Schwarz, Torsten; Spies, Maria; Cojocura-Miredin, Oana; Choi, Pyuck-Pa; et al, JOURNAL OF APPLIED PHYSICS, v.120, no.4, 2016-07 |
Investigation of the diffusion behavior of sodium in Cu(In,Ga)Se-2 layers Laemmle, Anke; Wuerz, Roland; Schwarz, Torsten; Cojocaru-Miredin, Oana; Choi, Pyuck-Pa; Powalla, Michael, JOURNAL OF APPLIED PHYSICS, v.115, no.15, 2014-04 |
Kesterite CZTS nanocrystals: pH-dependent synthesis Suryawanshi, Mahesh; Shin, Seung Wook; Bae, Woo R. I.; Gurav, Kishor; Kang, Myun Gil; Agawane, Ganesh; Patil, Pramod; et al, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.211, no.7, pp.1531 - 1534, 2014-07 |
Measurement of rotational temperature using SiH(A(2)Delta-X-2 Pi) emission spectrum in SiH4-H-2 plasmas Moon, SY; Kim, WY; Lee, HC; Ahn, SW; Lee, HM; Choe, W, PHYSICS OF PLASMAS, v.17, 2010-08 |
Quaternary Cu2ZnSnS4 nanocrystals: Facile and low cost synthesis by microwave-assisted solution method Shin, Seung Wook; Han, Jun Hee; Park, Chan Yeong; Moholkar, Annasaheb Vitthal; Lee, JeongYong; Kim, Jin Hyeok, JOURNAL OF ALLOYS AND COMPOUNDS, v.516, pp.96 - 101, 2012-03 |
Study of Band Structure at the Zn(S,O,OH)/Cu(In,Ga)Se-2 Interface via Rapid Thermal Annealing and Their Effect on the Photovoltaic Properties Shin, Dong Hyeop; Kim, Seung Tae; Kim, Ji Hye; Kang, Hee Jae; Ahn, Byung Tae; Kwon, Hyuk-Sang, ACS APPLIED MATERIALS & INTERFACES, v.5, no.24, pp.12921 - 12927, 2013-12 |
The characteristics of the multi-hole RF capacitively coupled plasma discharged with neon, argon and krypton Lee, H. S.; Lee, Yun-Seong; Seo, S. H.; Chang, Hong-Young, THIN SOLID FILMS, v.519, pp.6955 - 6959, 2011-08 |
The Role of Sodium as a Surfactant and Suppressor of Non-Radiative Recombination at Internal Surfaces in Cu2ZnSnS4 Gershon, Talia; Shin, Byungha; Bojarczuk, Nestor; Hopstaken, Marinus; Mitzi, David B.; Guha, Supratik, ADVANCED ENERGY MATERIALS, v.5, no.2, 2015-01 |
Wet Pretreatment-Induced Modification of Cu(In,Ga)Se-2/Cd-Free ZnTiO Buffer Interface Hwang, Suhwan; Liudmila, Larina; Lee, Hojin; Kim, Suncheul; Choi, Kyoung Soon; Jeon, Cheolho; Ahn, Byung Tae; et al, ACS APPLIED MATERIALS & INTERFACES, v.10, no.24, pp.20920 - 20928, 2018-06 |
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