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Showing results 1 to 8 of 8

1
Atomic structure of B-P and self-interstitial-B-P complexes in Si

Moon, CY; Ikini, YS; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S602 - S605, 2003-02

2
Atomic structure of B-related defects and B diffusion in Si predoped with P impurities

Moon, CY; Kim, YS; Chang, Kee-Joo, PHYSICAL REVIEW B, v.69, no.8, pp.085208 - 085208, 2004-02

3
Chemical bonding and diffusion of B dopants in C-predoped Si

Jwa, Sanghun; Bang, Junhyeok; Chang, Kee-Joo, PHYSICAL REVIEW B, v.80, no.7, pp.075206 - 075206, 2009-08

4
Chemical bonding effect of Ge atoms on B diffusion in Si

Bang, J; Kang, J; Lee, WJ; Chang, Kee-Joo; Kim, H, PHYSICAL REVIEW B, v.76, pp.064118 - 064118, 2007-08

5
Electrically inactive nitrogen complex in Si oxynitride

Lee, EC; Chang, Kee-Joo, PHYSICAL REVIEW B, v.66, pp.233205 - 233205, 2002-12

6
ESTIMATION OF EFFECTIVE DIFFUSION TIME IN A RAPID THERMAL-DIFFUSION USING A SOLID DIFFUSION SOURCE

Cho, Byung Jin; PARK, SK; Kim, Choong Ki, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.39, no.1, pp.111 - 117, 1992-01

7
First-principles study of the atomic structure of B-related defects in crystalline Si predoped with phosphorus

Moon, CY; Kim, YS; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.340, pp.561 - 564, 2003-12

8
Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation

Ang, CH; Tan, SS; Lek, CM; Lin, W; Zheng, ZJ; Chen, T; Cho, Byung Jin, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.5, no.4, pp.26 - 28, 2002-04

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