Showing results 46 to 49 of 49
Tensile-strained germanium CMOS integration on silicon Zang, H; Loh, WY; Ye, JD; Lo, GQ; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.28, no.12, pp.1117 - 1119, 2007-12 |
The Mechanism of Schottky Barrier Modulation of Tantalum Nitride/Ge Contacts Seo, Yu Jin; Lee, Sukwon; Baek, Seung-heon Chris; Hwang, Wan Sik; Yu, Hyun-Yong; Lee, Seok-Hee; Cho, Byung-Jin, IEEE ELECTRON DEVICE LETTERS, v.36, no.10, pp.997 - 1000, 2015-10 |
Theoretical study of the structural phase transformation of BeO under pressure Park, CJ; Lee, SG; Ko, YJ; Chang, Kee-Joo, PHYSICAL REVIEW B, v.59, no.21, pp.13501 - 13504, 1999-06 |
Vacancy clustering and diffusion in germanium using kinetic lattice Monte Carlo simulations Kang J.W.; Choi Y.G.; Lee J.H.; Lee S.H.; Oh H.J., MOLECULAR SIMULATION, v.35, no.3, pp.234 - 240, 2009 |
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