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Showing results 9 to 11 of 11

9
Role of hole fluence in gate oxide breakdown

Li, MF; He, YD; Ma, SG; Cho, Byung Jin; Lo, KF; Xu, MZ, IEEE ELECTRON DEVICE LETTERS, v.20, no.11, pp.586 - 588, 1999-11

10
Solution-Processed, Photo-Patternable Fluorinated Sol-Gel Hybrid Materials as a Bio-Fluidic Barrier for Flexible Electronic Systems

Lee, Injun; Kim, Yong Ho; Jang, Jinhyeong; Lee, Kwang-Heum; Jang, Junho; Lim, Young-Woo; Park, Sang-Hee Ko; et al, ADVANCED ELECTRONIC MATERIALS, v.6, no.3, pp.1901065, 2020-03

11
THE EFFECTS OF X-RAY IRRADIATION-INDUCED DAMAGE ON RELIABILITY IN MOS STRUCTURES

KIM, S; LEE, H; HAN, CH; Lee, Kwyro; CHOI, S; JEON, Y; DIFABRIZIO, E; et al, SOLID-STATE ELECTRONICS, v.38, no.1, pp.95 - 99, 1995-01

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