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Showing results 22 to 26 of 26

22
Performance Improvement of N-Type TiOx Active-Channel TFTs Grown by Low-Temperature Plasma-Enhanced ALD

Park, JW; Lee, D; Kwon, H; Yoo, Seunghyup; Huh, J, IEEE ELECTRON DEVICE LETTERS, v.30, no.7, pp.739 - 741, 2009-07

23
Polysilicon Channel TFT With Separated Double-Gate for Unified RAM (URAM)Unified Function for Nonvolatile SONOS Flash and High-Speed Capacitorless 1T-DRAM

Han, Jin-Woo; Ryu, Seong-Wan; Kim, Dong-Hyun; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.3, pp.601 - 607, 2010-03

24
Three-Dimensional Integration Approach to High-Density Memory Devices

Kim, Hojung; Jeon, Sanghun; Lee, Myoung-Jae; Park, Jaechul; Kang, Sangbeom; Choi, Hyun-Sik; Park, Churoo; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.11, pp.3820 - 3828, 2011-11

25
Transparent Oxide Thin-Film Transistors Composed of Al and Sn-doped Zinc Indium Oxide

Cho, Doo-Hee; Yang, Shinhyuk; Ryu, Min Ki; Park, Sang-Hee Ko; Byun, Chunwon; Yoon, Sung Min; Chu, Hye-Yong; et al, IEEE ELECTRON DEVICE LETTERS, v.30, no.1, pp.48 - 50, 2009-01

26
Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method

Hwang, Chi-Sun; Park, Sang-Hee Ko; Oh, Himchan; Ryu, Min-Ki; Cho, Kyoung-Ik; Yoon, Sung-Min, IEEE ELECTRON DEVICE LETTERS, v.35, no.3, pp.360 - 362, 2014-03

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