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Showing results 31 to 49 of 49

31	Observation of strong higher-order lattice anharmonicity in Raman and infrared spectra Yang, Xiaolong; Feng, Tianli; Kang, Joon Sang; Hu, Yongjie; Li, Ju; Ruan, Xiulin, PHYSICAL REVIEW B, v.101, no.16, 2020-04
32	Physical routes for the synthesis of kesterite Ratz, T.; Brammertz, G.; Caballero, R.; Leon, M.; Canulescu, S.; Schou, J.; Guetay, L.; et al, JOURNAL OF PHYSICS-ENERGY, v.1, no.4, 2019-10
33	PRESSURE DEPENDENCES OF BAND-GAPS AND OPTICAL-PHONON FREQUENCY IN CUBIC SIC CHEONG, BH; Chang, Kee-Joo; COHEN, ML, PHYSICAL REVIEW B, v.44, no.3, pp.1053 - 1056, 1991-07
34	Raman spectroscopic study of surface layer in fluorine-implanted Si Y.-J. Park; Kim, Jong Jean; Y.-J. Mo, JOURNAL OF APPLIED PHYSICS, v.80, no.9, pp.5509 - 5511, 1996
35	Raman spectroscopy investigation on excimer laser annealing and thickness determination of nanoscale amorphous silicon Zeng, YP; Lu, YF; Shen, ZX; Sun, WX; Yu, T; Liu, L; Zeng, JN; et al, NANOTECHNOLOGY, v.15, no.5, pp.658 - 662, 2004-05
36	Reconstructions and step structures on vicinal Si(001) surfaces by interaction with Bi Lee, YJ; Lee, SY; Kim, Sehun, JOURNAL OF PHYSICS-CONDENSED MATTER, v.11, no.8, pp.1953 - 1960, 1999-03
37	Resonant cavity germanium photodetector via stacked single-crystalline nanomembranes Cho, Minkyu; Seo, Jung-Hun; Kim, Munho; Lee, Jaeseong; Liu, Dong; Zhou, Weidong; Yu, Zongfu; et al, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.34, no.4, 2016-07
38	Roadmap to an Efficient Germanium-on-Silicon Laser: Strain vs. n-Type Doping Dutt, Birendra (Raj); Sukhdeo, Devanand S.; Nam, Donguk; Vulovic, Boris M.; Yuan, Ze; Saraswat, Krishna C., IEEE PHOTONICS JOURNAL, v.4, no.5, pp.2002 - 2009, 2012-10
39	Schottky barrier height modulation of metal-interlayer-semiconductor structure depending on contact surface orientation for multi-gate transistors Kim, Gwang-Sik; Lee, Tae In; Cho, Byung Jin; Yu, Hyun-Yong, APPLIED PHYSICS LETTERS, v.114, no.1, 2019-01
40	Single and double-doping effects on the thermoelectric properties of two Zintl compounds: Eu11Bi8.07(2)Sn1.93 and Eu10.74(2)K0.26Bi9.14(2)Sn0.86 Choi, Woongjin; Lee, Junsu; Lee, Yunho; Ahn, Kyunghan; You, Tae-Soo, DALTON TRANSACTIONS, v.46, no.35, pp.11840 - 11850, 2017-09
41	Strain-induced diffusion in a strained Si1-xGex/Si heterostructure Lim, YS; Lee, JeongYong; Kim, HS; Moon, DW, APPLIED PHYSICS LETTERS, v.77, no.25, pp.4157 - 4159, 2000-12
42	Strain-Induced Pseudoheterostructure Nanowires Confining Carriers at Room Temperature with Nanoscale-Tunable Band Profiles Nam, Donguk; Sukhdeo, David S.; Kang, Ju-Hyung; Petykiewicz, Jan; Lee, Jae Hyung; Jung, Woo Shik; Vuckovic, Jelena; et al, NANO LETTERS, v.13, no.7, pp.3118 - 3123, 2013-07
43	Strained germanium thin film membrane on silicon substrate for optoelectronics Nam, Donguk; Sukhdeo, Devanand; Roy, Arunanshu; Balram, Krishna; Cheng, Szu-Lin; Huang, Kevin Chih-Yao; Yuan, Ze; et al, OPTICS EXPRESS, v.19, no.27, pp.25866 - 25872, 2011-12
44	Strained-SiGe complementary MOSFETs adopting different thicknesses of silicon cap layers for low power and high performance applications Mheen, B; Song, YJ; Kang, JY; Hong, Songcheol, ETRI JOURNAL, v.27, no.4, pp.439 - 445, 2005-08
45	Study of Interaction between Incident Silicon and Germanium Fluxes and SiO2 Layer Using Solid-Source Molecular Beam Epitaxy Yun, Sun-Jin; Lee, Seung-Chang; Kim, Bo-Woo; Kang, Sang-Won, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.12, no.2, pp.1167 - 1169, 1994-03
46	Tensile-strained germanium CMOS integration on silicon Zang, H; Loh, WY; Ye, JD; Lo, GQ; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.28, no.12, pp.1117 - 1119, 2007-12
47	The Mechanism of Schottky Barrier Modulation of Tantalum Nitride/Ge Contacts Seo, Yu Jin; Lee, Sukwon; Baek, Seung-heon Chris; Hwang, Wan Sik; Yu, Hyun-Yong; Lee, Seok-Hee; Cho, Byung-Jin, IEEE ELECTRON DEVICE LETTERS, v.36, no.10, pp.997 - 1000, 2015-10
48	Theoretical study of the structural phase transformation of BeO under pressure Park, CJ; Lee, SG; Ko, YJ; Chang, Kee-Joo, PHYSICAL REVIEW B, v.59, no.21, pp.13501 - 13504, 1999-06
49	Vacancy clustering and diffusion in germanium using kinetic lattice Monte Carlo simulations Kang J.W.; Choi Y.G.; Lee J.H.; Lee S.H.; Oh H.J., MOLECULAR SIMULATION, v.35, no.3, pp.234 - 240, 2009

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