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Precursor approaches to MN (M = Ga, In) and BST for optical and memory devices = 광소자용 MN (M = Ga, In) 및 메모리소자용 BST박막 제조를 위한 선구물질 연구link Bae, Byoung-Jae; 배병재; et al, 한국과학기술원, 2003 |
ZnO/p-GaN Heterostructure for Solar Cells and the Effect of ZnGa2O4 Interlayer on Their Performance Nam, Seung-Yong; Choi, Yong-Seok; Lee, Ju-Ho; Park, Seong-Ju; Lee, Jeong-Yong; Lee, Dong-Seon, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.1, pp.448 - 451, 2013-01 |
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