Showing results 14 to 21 of 21
Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications Jeon, Sanghun; Park, Sungho; Song, Ihun; Hur, Ji-Hyun; Park, Jaechul; Kim, Hojung; Kim, Sunil; et al, ACS APPLIED MATERIALS & INTERFACES, v.3, no.1, pp.1 - 6, 2011-01 |
Oxide Heterostructure Resistive Memory Yang, Yuchao; Choi, ShinHyun; Lu, Wei, NANO LETTERS, v.13, no.6, pp.2908 - 2915, 2013-06 |
Physically Transient Memory on a Rapidly Dissoluble Paper for Security Application![]() Bae, Hagyoul; Lee, Byung-Hyun; Lee, Dongil; Seol, Myeong-Lok; Kim, Daewon; Han, Jin-Woo; Kim, Choong-Ki; et al, SCIENTIFIC REPORTS, v.6, 2016-12 |
Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage Kang, Dong-Ho; Choi, Woo-Young; Woo, Hyunsuk; Jang, Sungkyu; Park, Hyung-Youl; Shim, Jaewoo; Choi, Jae-Woong; et al, ACS APPLIED MATERIALS & INTERFACES, v.9, no.32, pp.27073 - 27082, 2017-08 |
Reliable Control of Filament Formation in Resistive Memories by Self-Assembled Nanoinsulators Derived from a Block Copolymer You, Byoungkuk; Park, Woon Ik; Kim, JongMin; Park, Kwi Il; Seo, Hyeon Kook; Lee, JeongYong; Jung, Yeon Sik; et al, ACS NANO, v.8, no.9, pp.9492 - 9502, 2014-09 |
Reliable Memristive Switching Memory Devices Enabled by Densely Packed Silver Nanocone Arrays as Electric -Field Concentrators You, Byoung Kuk; Kim, Jong Min; Joe, Daniel J.; Yang, Kyoung-Hoon; Shin, Youngsoo; Jung, Yeon Sik; Lee, Keon Jae, ACS NANO, v.10, no.10, pp.9478 - 9488, 2016-10 |
Role of Interface Reaction on Resistive Switching of Metal/Amorphous TiO2/Al RRAM Devices Jeong, Hu Young; Kim, Sung Kyu; Lee, JeongYong; Choi, Sung-Yool, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.10, pp.979 - 982, 2011 |
Three-Dimensional Integration Approach to High-Density Memory Devices Kim, Hojung; Jeon, Sanghun; Lee, Myoung-Jae; Park, Jaechul; Kang, Sangbeom; Choi, Hyun-Sik; Park, Churoo; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.11, pp.3820 - 3828, 2011-11 |
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