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Showing results 6 to 13 of 13

6
Linewidth properties of active-passive coupled monolithic InGaAs semiconductor ring lasers

Choi M.; Tanaka T.; Sunada S.; Harayama T., APPLIED PHYSICS LETTERS, v.94, no.23, 2009

7
Measurement of spontaneous emission factor for 850 nm gain-guided vertical-cavity surface-emitting lasers

Kim, JH; Shin, JH; Lee, Yong-Hee, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.36, pp.L1003 - L1005, 1997

8
Measurement of Spontaneous Emission Factor for 850nm Gain-Guided Vertical Cavity Surface-Emitting Lasers

Kim, Jae-Hyun; Shin, Jae-Heon; Lee, Yong-Hee, Japanese Journal of Applied Physics, Vol.36, pp.L1003-L1005, 1997-08

9
Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

Shin, Byungha; Weber, Justin R.; Long, Rathnait D.; Hurley, Paul K.; Van de Walle, Chris G.; McIntyre, Paul C., APPLIED PHYSICS LETTERS, v.96, no.15, 2010-04

10
Polarization-selective resonant photonic crystal photodetector

Yang, Jin-Kyu; Seo, Min-Kyo; Hwang, In-Kag; Kim, Sung-Bock; Lee, Yong-Hee, APPLIED PHYSICS LETTERS, v.93, no.21, 2008-11

11
Structural and optical properties of undoped and doped ZnSe/GaAs strained heterostructures

Kim, TW; Jung, M; Lee, DU; Oh, E; Lee, SD; Jung, HD; Kim, MD; et al, THIN SOLID FILMS, v.298, no.1-2, pp.187 - 190, 1997-04

12
Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001)

Shin, Byungha; Cagnon, Joel; Long, Rathnait D.; Hurley, Paul K.; Stemmer, Susanne; McIntyre, Paul C., ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.8, pp.40 - 43, 2009

13
Wafer-Scale Ultrathin, Single-Crystal Si and GaAs Photocathodes for Photoelectrochemical Hydrogen Production

Lee, Yong Hwan; Kim, Jaehoon; Oh, Jihun, ACS APPLIED MATERIALS & INTERFACES, v.10, no.39, pp.33230 - 33237, 2018-10

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