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Showing results 5 to 11 of 11

5
Highly selective SiO2 etching in low-electron-temperature inductively coupled plasma

Bai, KH; Chang, Hong-Young; Kwon, GC; Kim, HS; Kim, JS, JAPANESE JOURNAL OF APPLIED PHYSICS, v.46, pp.3602 - 3604, 2007-06

6
Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications

Lee, Young-Soo; Han, Ju-Hwan; Park, Jin-Seong; Park, Jozeph, Journal of Vacuum Science and Technology A, v.35, no.4, 2017-07

7
Optimization and performance analysis of a multilayer structure for daytime radiative cooling

Kim, Mingeon; Seo, Junyong; Yoon, Siwon; Lee, Heon; Lee, Jungchul; Lee, Bong Jae, JOURNAL OF QUANTITATIVE SPECTROSCOPY & RADIATIVE TRANSFER, v.260, 2021-02

8
Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide

Ang, CH; Ling, CH; Cheng, ZY; Cho, Byung Jin, JOURNAL OF APPLIED PHYSICS, v.88, no.5, pp.2872 - 2876, 2000-09

9
Role of hole fluence in gate oxide breakdown

Li, MF; He, YD; Ma, SG; Cho, Byung Jin; Lo, KF; Xu, MZ, IEEE ELECTRON DEVICE LETTERS, v.20, no.11, pp.586 - 588, 1999-11

10
Solution-Processed, Photo-Patternable Fluorinated Sol-Gel Hybrid Materials as a Bio-Fluidic Barrier for Flexible Electronic Systems

Lee, Injun; Kim, Yong Ho; Jang, Jinhyeong; Lee, Kwang-Heum; Jang, Junho; Lim, Young-Woo; Park, Sang-Hee Ko; et al, ADVANCED ELECTRONIC MATERIALS, v.6, no.3, pp.1901065, 2020-03

11
THE EFFECTS OF X-RAY IRRADIATION-INDUCED DAMAGE ON RELIABILITY IN MOS STRUCTURES

KIM, S; LEE, H; HAN, CH; Lee, Kwyro; CHOI, S; JEON, Y; DIFABRIZIO, E; et al, SOLID-STATE ELECTRONICS, v.38, no.1, pp.95 - 99, 1995-01

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