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(A) study on the $La_2O_3$ and La-Al-O films deposited by plasma-enhanced atomic layer deposition = PEALD 법을 이용한 $La_2O_3$ 및 La-Al-O 박막의 Gate 절연체 특성에 관한 연구link Kim, Ji-Hye; 김지혜; et al, 한국과학기술원, 2009 |
Analysis of interface trap density of metal-oxide-semiconductor devices with Pr2O3 gate dielectric using conductance method Jeon, Sanghun; Park, Sungho, MICROELECTRONIC ENGINEERING, v.88, no.6, pp.872 - 876, 2011-06 |
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