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Showing results 111581 to 111600 of 276255

111581
Initial culture conditions affect the sensitivity of HepG2 cells to excessive mechanical agitation

Kim, Jung Hoe; Hu, W.S., CYTOTECHNOLOGY, v.2, no.2, pp.135 - 140, 1989-05

111582
Initial Deformation During Small Punch Testing

Jin Sik Cheon; Kim, In Sup, JOURNAL OF TESTING AND EVALUATION, v.24, no.4, pp.255 - 262, 1996-07

111583
Initial degradation issues in AEMWE and the importance of catalyst/ionomer binding

Hyun, Jonghyun; Kim, Hee-Tak, 244h ECS Meeting, The Electrochemical Society, 2023-10

111584
Initial design method based on an iterative calculation of aberration and its application to an objective lens for imaging spectrometer

Choi, Jin; Kong, Hong-Jin; Lee, Jong Ung, APPLIED OPTICS, v.53, no.10, pp.1983 - 1989, 2014-04

111585
Initial design of the soft x-ray tomographic diagnostic array system for KSTAR plasmas

Kim, Junghee; Lee, Seung Hun; Rhee, JK; Choe, Wonho, 2005 47th Annual Meeting of the Division of Plasma Physics, 2005-10

111586
Initial design of the soft X-ray tomographic diagnostic array system for KSTAR plasmas

Kim, Junghee; Choe, Wonho, 5th Asia Plasma & Fusion Association, 2005-08

111587
Initial development of non-evaporating diesel sprays in common-rail injection systems

Kang, J; Bae, Choongsik; Lee, KO, INTERNATIONAL JOURNAL OF ENGINE RESEARCH, v.4, no.4, pp.283 - 298, 2003-08

111588
Initial Energy Logistics Cost Analysis for Stationary, Quasi-Dynamic, and Dynamic Wireless Charging Public Transportation Systems

Jang, Young Jae; Jeong, Seungmin; Lee, Min Seok, ENERGIES, v.9, no.7, 2016-07

111589
Initial ensemble dependence of Jarzynski equality in the thermodynamic limit

Jeon, Euijin; Kim, Yong Woon; Yi, Juyeon, JOURNAL OF PHYSICS A-MATHEMATICAL AND THEORETICAL, v.48, no.30, pp.305002, 2015-07

111590
Initial Expectation and Market Share: The Impact of Word-of-mouth and Loss Aversion

Yi, Sangyoon, Annual Meeting of INFORMS, INFORMS, 2007-11-05

111591
Initial Foreground Extraction for Fast Segmentation in Multiple Views

Paeng, KH; Hwang, SS; Kim, Seong-Dae, 2012 International Conference on Electronics, Information and Communication, The Institute of Electronics Engineers of Korea (IEEK), 2012-02-03

111592
Initial formation mechanisms of (Ga(1-x)Mn(x))N nanorods grown on Al(2)O(3) (0001) substrates

Lee, Kyu Hyung; Lee, JeongYong; Jeon, H. C.; Kang, T. W.; Kwon, H. Y.; Kim, T. W., JOURNAL OF MATERIALS RESEARCH, v.23, no.12, pp.3275 - 3280, 2008-12

111593
Initial formation mechanisms of the supersaturation region and the columnar structure in ZnO thin films grown on n-Si (001) substrates

Yuk, Jong Min; Lee, Jeong-Yong; Jung, J. H.; Kim, T. W.; Son, D. I.; Choi, W. K., APPLIED PHYSICS LETTERS, v.90, no.3, pp.233 - 236, 2007-01

111594
Initial Progress Toward a Surface Morphable Tactile Interface

Mun, Seongcheol; Yun, Sungryul; Nam, Saekwang; Park, Seung-Kool; Kyung, Ki-Uk, AsiaHaptics 2016, AsiaHaptics, 2016-11

111595
Initial relaxation of spatially evolving turbulent channel flow with blowing and suction

Chung, YM; Sung, Hyung Jin, AIAA JOURNAL, v.39, no.11, pp.2091 - 2099, 2001-11

111596
Initial Results From S-1 Spheromak

Yamada, M; Ellis, RA; Furth, JHP; Hart, GW; Janos, AC; Jardin, SC; Myerhofer, DD; et al, Tenth International Conference on Plasma Physics and Controlled Nuclear Fusion Research, pp.535 - 544, 1985

111597
Initial Results of a Neural network approach for Hangul Character recognition

김진형; 고병기, 정보과학회 학술발표, v.0, no.0, pp.0 - 0, 정보과학회, 1988-10

111598
Initial stage of nitridation on Si(100) surface using low-energy nitrogen ion implantation

Kim K.-j.; Kang T.-H.; Ihm K.; Jeon C.; Hwang C.-C.; Kim B., SURFACE SCIENCE, v.600, no.17, pp.3496 - 3501, 2006

111599
Initial Stage of Solid Phase Epitaxial Growth of GaAs Films on Vicinal Si (001) Substrate

Lee, Jeong Yong; Choo, Woong Kil, MRS Proc., pp.131 - 132, 1992-12-01

111600
Initial stages of ruthenium film growth in plasma-enhanced atomic layer deposition

Kwon, Se-Hun; Kwon, Oh-Kyum; Kim, Jin-Hyock; Oh, Heung-Ryong; Kim, Kwang-Ho; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.5, pp.H296 - H300, 2008-03

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