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Showing results 111441 to 111460 of 276338

111441
Infrared-to-ultraviolet upconverting nanoparticles for COVID-19-related disinfection applications

Xu, Emma Z.; Lee, Changhwan; Pritzl, Stefanie D.; Chen, Allen S.; Lohmueller, Theobald; Cohen, Bruce E.; Chan, Emory M.; et al, Optical Materials: X, v.12, 2021-12

111442
Infrastructure interdependency modeling for cascading failure assessment = 인프라 간 상호의존관계 모델링 및 피해파급효과 평가 방법론link

Moon, Juk-Rin; 문적린; et al, 한국과학기술원, 2014

111443
Infrastructure support for ad hoc network: When and where?

Song Y.; Park D., Proc. -ICPP 2004 on Mobile and Wireless Networking, High Perform. Sci. and Eng. Comput., Netw. Des. and Archit., Opt.Netw. Control and Manage., Ad Hoc and Sensor Netw., Compile and Run Time Tech. for Parallel Comput., pp.141 - 147, ICPPW '04, 2004-08-15

111444
Infrastructure Support Increases the Capacity of Ad Hoc Wireless Networks

cho, jeong woo; Kim, Seong-Lyun; Chong, Song, IEEE VTC 2005, IEEE, 2005-05

111445
Infrastructure-building for public health : WHO’s global initiatives, voluntary organizations, and tuberculosis control policy in postcolonial South Korea, 1945-1970 = 공중보건 인프라 만들기 : 해방 이후의 국가결핵관리정책, 민간보건단체, 그리고 세계보건기구의 범세계적인 보건사업, 1945-1970link

Kim, Kyuri; Park, Buhmsoon; et al, 한국과학기술원, 2019

111446
Infrastructure-building for Public Health : The World Health Organization and Tuberculosis Control in South Korea, 1945-1963

Kim, Kyuri; Park, Buhm Soon, KOREAN JOURNAL OF MEDICAL HISTORY, v.28, no.1, pp.89 - 137, 2019-04

111447
Infrastructure-free Collaborative Indoor Positioning Scheme for Time-critical Team Operations

Noh, Youngtae; Yamaguchi, Hirozumi; Lee, Uichin, IEEE TRANSACTIONS ON SYSTEMS MAN CYBERNETICS-SYSTEMS, v.48, no.3, pp.418 - 432, 2018-03

111448
InGaAs / InP PIN 광검출기와 자기정렬구조의 JFET으로 이루어진 수신용 광전집적회로의 제작 = Fabrication of monolithically integrated phtoreceiver front-end using InGaAs / InP PIN photodiode and self-aligned JFET'slink

박기성; Park, Ki-Sung; et al, 한국과학기술원, 1992

111449
InGaAs / InP planar형 PIN-PD 1×12 에레이 제작 및 특성 측정 = Fabrication and characterization of the 1 ×12 어레이 제작 및 특성 측정link

정종민; Cheong, Jong-Min; et al, 한국과학기술원, 1992

111450
InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on V-grooved InGaAs/GaAs substrates

Lee, MS; Kim, EK; Kim, SI; Hwang, SM; Kim, CK; Min, SK; Lee, JeongYong, SOLID STATE COMMUNICATIONS, v.101, no.9, pp.705 - 708, 1997-03

111451
InGaAs vertical-cavity surface-emitting lasers buried in amorphous GaAs

Yoo, BS; Chu, HY; Park, MS; 박효훈; Lee, EH, The 22nd International Symposium on Compound Semiconductor 1995s, pp.0 - 0, ISCS, 1995-08-29

111452
InGaAs/GaAs quantum well intermixing using proton irradiation for non-absorbing mirror

Yun, Ye Seul; Kim, SangHyeon; Ryu, Han-Youl; Park, Min-Su; Jang, Hojin; Song, Jong Han; Lim, Weon Cheol; et al, CURRENT APPLIED PHYSICS, v.16, no.9, pp.1005 - 1008, 2016-09

111453
InGaAs/InP 평면형 PIN-PD 1X12 어레이 제작 및 특성 측정

정종민; 박찬용; 지윤규; 이용탁; 이창원; 박경현, 전자공학회논문지, v.29, no.5, pp.369 - 462, 1992-05

111454
InGaAsP DFB lasers frequency-locked to an absolute reference

Chung, Yun Chur; Tkach, RW, International IEEE Semiconductor Laser Conference, 1988

111455
InGaAsP microdisk lasers on AlxOy

Song, DS; Hwang, JK; Kim, CK; Han, IY; Jang, DH; Lee, Yong-Hee, IEEE PHOTONICS TECHNOLOGY LETTERS, v.12, no.8, pp.954 - 956, 2000-08

111456
InGaAsP nanobeam light emitter integrated with Si waveguide via transfer printing

Son, Jaehyeon; Karnadi, Indra; Kim, Ju-Young; Jang, Hoon; Lee, Seungwoo; Kim, Ki Soo; Lee, Yong-Hee; et al, 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, Institute of Electrical and Electronics Engineers Inc., 2015-08

111457
InGaAsP/InP integrated twin-guide laser diode with grooved corner reflector fabricated by reactive ion beam etching

soo-kun jeon; moon-jeong kim; jung-ho cha; Kwon, Young Se, ELECTRONICS LETTERS, v.38, no.5, pp.223 - 225, 2002-02

111458
InGaN/GaN MQW Light Emitting Diode with Heavily Doped Tunnel Junction Structure

이정용, 제8회 한국반도체학술대회, pp.521 - 522, KCS, 2001-02

111459
InGaP/GaAs heterojunction bipolar transistor ballasted with extended ledge resistor = 레지부분 베이스 저항으로 열 안정화된 InGaP/GaAs 이종접합 바이폴라 트랜지스터link

Jeon, Sang-Hoon; 전상훈; et al, 한국과학기술원, 2001

111460
InGaP/GaAs heterojunction phototransistors transferred to a Si substrate by metal wafer bonding combined with epitaxial lift-off

Park, Min-Su; Geum, Dae-Myeong; Kyhm, Ji Hoon; Song, Jin Dong; Kim, SangHyeon; Choi, Won Jun, OPTICS EXPRESS, v.23, no.21, pp.26888 - 26894, 2015-10

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