Showing results 2 to 3 of 3
First-principles study of boron-related defects in $SiO_2$ and boron segregation at the $Si/SiO_2$ interface = Bulk $SiO_2$ 내에서의 붕소결함과 $Si/SiO_2$ 계면에서의 붕소응집에 관한 제일원리 연구link Hwang, Jin-Heui; 황진희; et al, 한국과학기술원, 2011 |
First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2 Oh, Young-Jun; Noh, Hyeon-Kyun; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.407, no.15, pp.2989 - 2992, 2012-08 |
Discover