Excitation mechanism of visible, Tb3+ photoluminescence from Tb-doped silicon oxynitride

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The excitation mechanism of visible luminescence from Tb3+-doped silicon oxynitride is investigated. Tb-doped silicon oxynitride films were deposited by inductive-coupled plasma-enhanced chemical vapor deposition of SiH4, O-2, and N-2 with concurrent sputtering of Tb. Luminescences from both the host matrix and the Tb3+ intra-4f transition are observed, but no correlation is found between them as the composition and the annealing conditions were varied. Photoluminescence excitation spectroscopy shows a strong increase in the Tb3+ luminescence intensity as the pump energy is increased above 3.5 eV while the host matrix luminescence decreases. Taken together, the results that there is little energy transfer between band-tail states of silicon oxynitride and Tb3+, and that efficient excitation of Tb3+ by carriers requires excitation of carriers into the extended states of oxynitride. (c) 2006 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2006-04
Language
English
Article Type
Article
Keywords

HYDROGENATED AMORPHOUS-SILICON; CHEMICAL-VAPOR-DEPOSITION; OPTICAL-PROPERTIES; ER3+ LUMINESCENCE; IONS; FILMS; SI; ELECTROLUMINESCENCE; ENHANCEMENT; OXIDE

Citation

APPLIED PHYSICS LETTERS, v.88, pp.475 - 488

ISSN
0003-6951
DOI
10.1063/1.2195100
URI
http://hdl.handle.net/10203/91420
Appears in Collection
NT-Journal Papers(저널논문)
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