DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, H | ko |
dc.contributor.author | Seo, SY | ko |
dc.contributor.author | Shin, JungHoon | ko |
dc.date.accessioned | 2013-03-07T21:37:02Z | - |
dc.date.available | 2013-03-07T21:37:02Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006-04 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.88, pp.475 - 488 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/91420 | - |
dc.description.abstract | The excitation mechanism of visible luminescence from Tb3+-doped silicon oxynitride is investigated. Tb-doped silicon oxynitride films were deposited by inductive-coupled plasma-enhanced chemical vapor deposition of SiH4, O-2, and N-2 with concurrent sputtering of Tb. Luminescences from both the host matrix and the Tb3+ intra-4f transition are observed, but no correlation is found between them as the composition and the annealing conditions were varied. Photoluminescence excitation spectroscopy shows a strong increase in the Tb3+ luminescence intensity as the pump energy is increased above 3.5 eV while the host matrix luminescence decreases. Taken together, the results that there is little energy transfer between band-tail states of silicon oxynitride and Tb3+, and that efficient excitation of Tb3+ by carriers requires excitation of carriers into the extended states of oxynitride. (c) 2006 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | HYDROGENATED AMORPHOUS-SILICON | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | ER3+ LUMINESCENCE | - |
dc.subject | IONS | - |
dc.subject | FILMS | - |
dc.subject | SI | - |
dc.subject | ELECTROLUMINESCENCE | - |
dc.subject | ENHANCEMENT | - |
dc.subject | OXIDE | - |
dc.title | Excitation mechanism of visible, Tb3+ photoluminescence from Tb-doped silicon oxynitride | - |
dc.type | Article | - |
dc.identifier.wosid | 000236969300036 | - |
dc.identifier.scopusid | 2-s2.0-33646194019 | - |
dc.type.rims | ART | - |
dc.citation.volume | 88 | - |
dc.citation.beginningpage | 475 | - |
dc.citation.endingpage | 488 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.2195100 | - |
dc.contributor.localauthor | Shin, JungHoon | - |
dc.contributor.nonIdAuthor | Jeong, H | - |
dc.contributor.nonIdAuthor | Seo, SY | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | HYDROGENATED AMORPHOUS-SILICON | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | ER3+ LUMINESCENCE | - |
dc.subject.keywordPlus | IONS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | ELECTROLUMINESCENCE | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | OXIDE | - |
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