Effects of two-dimensional electron gas on the optical properties of InAs/GaAs quantum dots in modulation-doped heterostructures

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The Shubnikov-de Haas data showed that the carrier density of two-dimensional electron gas (2DEG) in the GaAs active region containing InAs quantum dot (QD) arrays embedded between modulation-doped Al0.25Ga0.75As/GaAs heterostructures increased with increasing doping concentration in the modulation layer. The transmission electron microscopy images showed that the sizes of the self-assembled InAs vertically stacked QD arrays inserted in the GaAs did not change significantly with increasing carrier density of the 2DEG. The photoluminescence (PL) spectra showed that the peaks corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole subband of the InAs QDs shifted to the higher energy side with increasing density of the 2DEG and that the full width at half maximum of the PL spectrum increased slightly with increasing density of the 2DEG. (C) 2005 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2005-01
Language
English
Article Type
Article
Keywords

MOLECULAR-BEAM EPITAXY; TRANSPORT-PROPERTIES; CARRIER RELAXATION; EMISSION-SPECTRA; INAS ISLANDS; GAAS; GROWTH; LASERS; INP(001); INGAAS

Citation

APPLIED PHYSICS LETTERS, v.86, pp.353 - 355

ISSN
0003-6951
DOI
10.1063/1.1849853
URI
http://hdl.handle.net/10203/89789
Appears in Collection
MS-Journal Papers(저널논문)
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