Strength design and minimization of residual stresses in reversible GaAs wafer bonding process

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The GaAs wafer bonding process is investigated to reduce the mechanical failures of GaAs wafer based on strength design concept. Three-point bending experiment is performed to measure the fracture strength of GaAs wafer, of which cleavage takes place on (110) plane. We propose a simple method for minimizing the thermal residual stress in a three-layer structure, of which the basic idea is to use an appropriate steady-state temperature gradient to the wafer bonding process. The optimum bonding condition of GaAs/wax/sapphire structure is determined based on the proposed method. The effect of material anisotropy on the thermal residual stress is also analyzed by finite element method.
Trans Tech Publications Ltd.
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Article; Proceedings Paper

KEY ENGINEERING MATERIALS, v.306-308, pp.1337 - 1342

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ME-Journal Papers(저널논문)
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