Growth mechanisms of thin-film columnar structures in zinc oxide on p-type silicon substrates

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X-ray diffraction analysis reveals that the crystallinity of (0001)-oriented columnar grains in ZnO thin films grown on p-Si (100) substrates is enhanced with increasing growth temperature, and transmission electron microscopy confirms that the columnar structures become more stable at higher growth temperature. The morphological evolution of the columnar structure in ZnO thin films is described on the basis of experimental measurements. (c) 2006 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2006-02
Language
English
Article Type
Article
Keywords

PULSED-LASER DEPOSITION; DOPED ZNO FILMS; ROOM-TEMPERATURE; SI; EMISSION

Citation

APPLIED PHYSICS LETTERS, v.88, pp.349 - 358

ISSN
0003-6951
DOI
10.1063/1.2174829
URI
http://hdl.handle.net/10203/88634
Appears in Collection
MS-Journal Papers(저널논문)
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