DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, HK | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Kim, KS | ko |
dc.contributor.author | Yang, GM | ko |
dc.date.accessioned | 2013-03-06T05:36:00Z | - |
dc.date.available | 2013-03-06T05:36:00Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-09 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.3, pp.425 - 428 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://hdl.handle.net/10203/85976 | - |
dc.description.abstract | We report the effect of the capping layer on the optical and structural properties in InGaN/GaN multiple quantum wells of high indium content by using photoluminescence and transmission electron microscopy. For the MQW structure of high indium content, V-defects are mainly formed at the inversion domain boundaries (IDBs) with a translation vector of R = c/2 within the highly strained InGaN/GaN MQWs. We found that using an Al0.1Ga0.9N capping layer with a tensile strain resulted in a transition of the dominant emission from a quantum-dot-like structure (3-d) to a quantum well (2-d) and in an increase in the defect density. The origin of the transition of the dominant emission peak is the disappearance of quantum dot-like structures at the apex of the V-defect due to Al incorporation through the lDBs during the growth of the Al0.1Ga0.9N capping layer. | - |
dc.language | English | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | MULTIPLE-QUANTUM WELLS | - |
dc.subject | V-DEFECTS | - |
dc.subject | GAN | - |
dc.title | Effect of a tensile strained Al0.1Ga0.9N capping layer on the optical and structural properties in InGaN/GaN superlattices | - |
dc.type | Article | - |
dc.identifier.wosid | 000171029700003 | - |
dc.identifier.scopusid | 2-s2.0-0035540157 | - |
dc.type.rims | ART | - |
dc.citation.volume | 39 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 425 | - |
dc.citation.endingpage | 428 | - |
dc.citation.publicationname | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Cho, HK | - |
dc.contributor.nonIdAuthor | Kim, KS | - |
dc.contributor.nonIdAuthor | Yang, GM | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordPlus | MULTIPLE-QUANTUM WELLS | - |
dc.subject.keywordPlus | V-DEFECTS | - |
dc.subject.keywordPlus | GAN | - |
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