Correlation between the ordered structure and the valence-band splitting in highly strained CdxZn1-xTe epilayers

Cited 5 time in webofscience Cited 0 time in scopus
  • Hit : 349
  • Download : 169
DC FieldValueLanguage
dc.contributor.authorKim, TWko
dc.contributor.authorKwack, KDko
dc.contributor.authorPark, JGko
dc.contributor.authorLee, HSko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorJang, MSko
dc.contributor.authorPark, HLko
dc.date.accessioned2013-03-06T04:40:30Z-
dc.date.available2013-03-06T04:40:30Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2003-07-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.83, pp.269 - 271-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/85827-
dc.description.abstractSelected-area electron diffraction pattern (SADP) results showed two sets of {1/2 1/2 1/2} superstructure reflections with symmetrical intensities along the [110] axis, and the corresponding high-resolution transmission electron microscopy images indicated a doublet periodicity in the contrast of the {111} lattice planes. Photoluminescence spectra from highly strained CdxZn1-xTe/GaAs heterostructures showed that the valence-band splitting into the heavy hole and the light hole bands occurred as the Cd mole fraction was increased. The valence-band splitting is strongly correlated to the CuPtB-type ordered structure in highly strained heterostructures. (C) 2003 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectMOLECULAR-BEAM EPITAXY-
dc.subjectVAPOR-PHASE EPITAXY-
dc.subjectLONG-RANGE ORDER-
dc.subjectCDTE-FILMS-
dc.subjectGAAS-
dc.subjectCDZNTE-
dc.subjectGROWTH-
dc.subject(111)B-
dc.titleCorrelation between the ordered structure and the valence-band splitting in highly strained CdxZn1-xTe epilayers-
dc.typeArticle-
dc.identifier.wosid000184038900022-
dc.identifier.scopusid2-s2.0-0042769352-
dc.type.rimsART-
dc.citation.volume83-
dc.citation.beginningpage269-
dc.citation.endingpage271-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.1592622-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorKim, TW-
dc.contributor.nonIdAuthorKwack, KD-
dc.contributor.nonIdAuthorPark, JG-
dc.contributor.nonIdAuthorLee, HS-
dc.contributor.nonIdAuthorJang, MS-
dc.contributor.nonIdAuthorPark, HL-
dc.type.journalArticleArticle-
dc.subject.keywordPlusMOLECULAR-BEAM EPITAXY-
dc.subject.keywordPlusVAPOR-PHASE EPITAXY-
dc.subject.keywordPlusLONG-RANGE ORDER-
dc.subject.keywordPlusCDTE-FILMS-
dc.subject.keywordPlusGAAS-
dc.subject.keywordPlusCDZNTE-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlus(111)B-
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 5 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0